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Abstract
In this work, we will review possible technology options for next generation wireless communication. Next to the introduction of specific device architectures and materials, dissimilar from standard Si CMOS, the challenge will lie in the co-integration of these non-Si technologies with CMOS to enable power efficient systems with high performance, in this case high speed and output power, and reduced form factor. Next to monolithic integration, sequential 3D, currently been investigated for LOGIC density scaling, can be one of the enablers, allowing to combine technologies with very different needs at a finer grain and thus higher density than traditional 3D-SOC and 3D-IC technologies.
Original language | English |
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Title of host publication | 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1-3 |
Number of pages | 3 |
Volume | 2018-March |
ISBN (Electronic) | 9781538637654 |
ISBN (Print) | 9781538637654 |
DOIs | |
Publication status | Published - 7 Mar 2018 |
Event | 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 - Burlingame, United States Duration: 16 Oct 2017 → 18 Oct 2017 |
Publication series
Name | 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 |
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Volume | 2018-March |
Conference
Conference | 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 |
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Country/Territory | United States |
City | Burlingame |
Period | 16/10/17 → 18/10/17 |
Keywords
- III-V
- monolithic integration
- sequential 3D
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