A 1 * 64 complementary metal oxide semiconductor ranging sensor based on current-assisted photonic demodulators

Ward Van Der Tempel, Daniel Van Nieuwenhove, Riemer Grootjans, Maarten Kuijk

Research output: Contribution to journalArticle

Abstract

A new complementary metal oxide semiconductor (CMOS) active pixel-ranging sensor is presented, realised as a 1 * 64 array of 30 microns * 30 microns lock-in pixels. The sensor is based on the Current-Assisted Photonic Demodulator (CAPD), implemented in a Standard CMOS 0.35 ? m technology. The ranging pixel achieves 75% Fill-Factor, 0.22 A W-1 total QE and a demodulation bandwidth up to 70 MHz, both at 860 nm light. Range-finding is achieved through Modulated Wave Time-Of-Flight (TOF) measurements with a modulation frequency of 20 MHz. Distance measurements are presented. This sensor represents the first step towards integrating CAPD-based lock-in pixels in large TOF CMOS ranging systems
Original languageEnglish
Pages (from-to)237-245
Number of pages9
JournalInternational Journal of Intelligent Systems Technologies and Applications
Volume5
Issue number3-4
Publication statusPublished - 1 Jan 2008

Keywords

  • CMOS image sensors
  • spatial variables measurement
  • Detection of radiation

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