A 120-140-GHz LNA in 250-nm InP HBT

Vikas Chauhan, Nadine Collaert, Piet Wambacq

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This letter presents a D -band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB bandwidth greater than 20 GHz (120–140 GHz), and a measured noise figure (NF) of less than 6 dB in the band. A reduction in the 3-dB bandwidth from simulation was observed during the measurements which was attributed to the substrate waves using full chip electromagnetic (EM) simulation. EM simulations show that a partial or complete removal of the back side metallization of the InP substrate, holes in metal-1 ground plane, or a strategic placement of through-substrate vias suppress these substrate waves. To the authors’ knowledge, this is the first 120–140-GHz LNA in the InP 250-nm HBT technology.
Original languageEnglish
Pages (from-to)1315-1318
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Issue number11
Publication statusPublished - 1 Nov 2022

Bibliographical note

Publisher Copyright:
© 2001-2012 IEEE.

Copyright 2022 Elsevier B.V., All rights reserved.


  • 6G
  • III-V devices
  • D-band
  • integrated circuits (ICs)
  • low-noise amplifier (LNA)
  • millimeter wave circuits
  • wideband


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