A 23 GHz Low-Phase-Noise Transformer-Feedback VCO in 22nm FD-SOI with a FOMT of 191dBc/Hz

Zhiwei Zong, Cheng-Hsueh Tsai, Federico Pepe, Piet Wambacq, Giovanni Mangraviti, Yao Liu, Qixian Shi, Bertrand Parvais

Research output: Chapter in Book/Report/Conference proceedingConference paper

4 Citations (Scopus)

Abstract

This paper presents a 23GHz low-phase-noise transformer-feedback differential VCO with a 27% frequency tuning range. By adding a source-bridging capacitor between the sources of the transistors that are connected to the two feedback transformers, the phase noise at 1/f 3 region is improved due to the suppression of flicker noise up-conversion. The proposed VCO is implemented in a 22nm FD-SOI technology with a low supply voltage of 0.65V. The measured phase noise is -106 dBc/Hz at 1MHz frequency offset with power consumption of 11.5mW, and the corresponding FOM and FOMT are 182.6 dBc/Hz and 191 dBc/Hz, respectively.
Original languageEnglish
Title of host publication2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Place of PublicationBurlingame
PublisherIEEE
Number of pages2
ISBN (Electronic)978-1-5386-7627-1
ISBN (Print)978-1-5386-7628-8
DOIs
Publication statusPublished - 2018
Event2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 - Burlingame, United States
Duration: 15 Oct 201818 Oct 2018

Conference

Conference2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
CountryUnited States
CityBurlingame
Period15/10/1818/10/18

Keywords

  • phase noise
  • voltage-controlled oscillator (VCO)

Fingerprint

Dive into the research topics of 'A 23 GHz Low-Phase-Noise Transformer-Feedback VCO in 22nm FD-SOI with a FOMT of 191dBc/Hz'. Together they form a unique fingerprint.

Cite this