A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique

Dae-Woong Park, Dzuhri Radityo Utomo, Jong-Phil Hong, Kristof Vaesen, Piet Wambacq, Sang-Gug Lee

Research output: Chapter in Book/Report/Conference proceedingConference paper

Original languageEnglish
Title of host publicationProceedings of the 2020 IEEE Symposium on VLSI Circuits
PublisherIEEE
Pages1-2
Publication statusPublished - 2020
Event2020 IEEE Symposium on VLSI Circuits -
Duration: 14 Jun 202019 Jun 2020

Conference

Conference2020 IEEE Symposium on VLSI Circuits
Period14/06/2019/06/20

Cite this