A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique

Dae-Woong Park, Dzuhri Radityo Utomo, Jong-Phil Hong, Kristof Vaesen, Piet Wambacq, Sang-Gug Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research

Original language	English
Title of host publication	Proceedings of the 2020 IEEE Symposium on VLSI Circuits
Publisher	IEEE
Pages	1-2
Publication status	Published - 2020
Event	2020 IEEE Symposium on VLSI Circuits - Duration: 14 Jun 2020 → 19 Jun 2020

Conference	2020 IEEE Symposium on VLSI Circuits
Period	14/06/20 → 19/06/20

Cite this

@inproceedings{6b7f33e005ff45d4919a6bf0cc05e249,

title = "A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique",

author = "Dae-Woong Park and {Radityo Utomo}, Dzuhri and Jong-Phil Hong and Kristof Vaesen and Piet Wambacq and Sang-Gug Lee",

year = "2020",

language = "English",

pages = "1--2",

booktitle = "Proceedings of the 2020 IEEE Symposium on VLSI Circuits",

publisher = "IEEE",

note = "2020 IEEE Symposium on VLSI Circuits ; Conference date: 14-06-2020 Through 19-06-2020",

}

Proceedings of the 2020 IEEE Symposium on VLSI Circuits. IEEE, 2020. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research

TY - GEN

T1 - A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique

AU - Park, Dae-Woong

AU - Radityo Utomo, Dzuhri

AU - Hong, Jong-Phil

AU - Vaesen, Kristof

AU - Wambacq, Piet

AU - Lee, Sang-Gug

PY - 2020

Y1 - 2020

M3 - Conference paper

SP - 1

EP - 2

BT - Proceedings of the 2020 IEEE Symposium on VLSI Circuits

PB - IEEE

T2 - 2020 IEEE Symposium on VLSI Circuits

Y2 - 14 June 2020 through 19 June 2020

ER -