A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI

Zhiwei Zong; Xinyan Tang; Johan Hoang-Dung Nguyen; Khaled Khalaf; Giovanni Mangraviti; Yao Liu; Piet Wambacq

doi:10.1109/cicc48029.2020.9075906

A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI

Zhiwei Zong, Xinyan Tang, Johan Hoang-Dung Nguyen, Khaled Khalaf, Giovanni Mangraviti, Yao Liu, Piet Wambacq

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

10 Citations (Scopus)

Abstract

We present a two-way current combining power amplifier (PA) for 28GHz wireless communication. To boost the saturated output power (P_SAT) and maintain a high power-added efficiency (PAE), a differential 3-stacked transistors structure is used for the unit PA cell. The stability factor and the PAE are improved with capacitive neutralization and shunt inductor intermediate node matching. Reliability issues under a 2.4V supply voltage are relieved with properly designed biasing and gate capacitances. The PA is implemented in a 22nm FD-SOI technology with a chip core area of 0.21 mm², Measurement results show that the PA achieves a power gain of 27dB and a PSAT of 21.7dBm with a maximum PAE of 27.1% at 28GHz. The output 1dB compression point (P_1aB) is 19.1 dBm. Measured PAE at P_1dB and 6dB power back-off are 23% and 10.3%, respectively.

Original language	English
Title of host publication	2020 IEEE Custom Integrated Circuits Conference (CICC)
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/cicc48029.2020.9075906
Publication status	Published - Mar 2020
Event	2020 IEEE Custom Integrated Circuits Conference (CICC) - , United States Duration: 22 Mar 2019 → 25 Mar 2020

Conference

Conference	2020 IEEE Custom Integrated Circuits Conference (CICC)
Country/Territory	United States
Period	22/03/19 → 25/03/20

Access to Document

10.1109/cicc48029.2020.9075906

Cite this

@inproceedings{ebda31fffd584af19168bf028ec2ba9f,

title = "A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI",

abstract = "We present a two-way current combining power amplifier (PA) for 28GHz wireless communication. To boost the saturated output power (PSAT) and maintain a high power-added efficiency (PAE), a differential 3-stacked transistors structure is used for the unit PA cell. The stability factor and the PAE are improved with capacitive neutralization and shunt inductor intermediate node matching. Reliability issues under a 2.4V supply voltage are relieved with properly designed biasing and gate capacitances. The PA is implemented in a 22nm FD-SOI technology with a chip core area of 0.21 mm2, Measurement results show that the PA achieves a power gain of 27dB and a PSAT of 21.7dBm with a maximum PAE of 27.1% at 28GHz. The output 1dB compression point (P1aB) is 19.1 dBm. Measured PAE at P1dB and 6dB power back-off are 23% and 10.3%, respectively.",

author = "Zhiwei Zong and Xinyan Tang and Nguyen, {Johan Hoang-Dung} and Khaled Khalaf and Giovanni Mangraviti and Yao Liu and Piet Wambacq",

year = "2020",

month = mar,

doi = "10.1109/cicc48029.2020.9075906",

language = "English",

isbn = "9781728160313",

pages = "1--4",

booktitle = "2020 IEEE Custom Integrated Circuits Conference (CICC)",

note = "2020 IEEE Custom Integrated Circuits Conference (CICC) ; Conference date: 22-03-2019 Through 25-03-2020",

}

TY - GEN

T1 - A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI

AU - Zong, Zhiwei

AU - Tang, Xinyan

AU - Nguyen, Johan Hoang-Dung

AU - Khalaf, Khaled

AU - Mangraviti, Giovanni

AU - Liu, Yao

AU - Wambacq, Piet

PY - 2020/3

Y1 - 2020/3

N2 - We present a two-way current combining power amplifier (PA) for 28GHz wireless communication. To boost the saturated output power (PSAT) and maintain a high power-added efficiency (PAE), a differential 3-stacked transistors structure is used for the unit PA cell. The stability factor and the PAE are improved with capacitive neutralization and shunt inductor intermediate node matching. Reliability issues under a 2.4V supply voltage are relieved with properly designed biasing and gate capacitances. The PA is implemented in a 22nm FD-SOI technology with a chip core area of 0.21 mm2, Measurement results show that the PA achieves a power gain of 27dB and a PSAT of 21.7dBm with a maximum PAE of 27.1% at 28GHz. The output 1dB compression point (P1aB) is 19.1 dBm. Measured PAE at P1dB and 6dB power back-off are 23% and 10.3%, respectively.

AB - We present a two-way current combining power amplifier (PA) for 28GHz wireless communication. To boost the saturated output power (PSAT) and maintain a high power-added efficiency (PAE), a differential 3-stacked transistors structure is used for the unit PA cell. The stability factor and the PAE are improved with capacitive neutralization and shunt inductor intermediate node matching. Reliability issues under a 2.4V supply voltage are relieved with properly designed biasing and gate capacitances. The PA is implemented in a 22nm FD-SOI technology with a chip core area of 0.21 mm2, Measurement results show that the PA achieves a power gain of 27dB and a PSAT of 21.7dBm with a maximum PAE of 27.1% at 28GHz. The output 1dB compression point (P1aB) is 19.1 dBm. Measured PAE at P1dB and 6dB power back-off are 23% and 10.3%, respectively.

UR - http://dx.doi.org/10.1109/cicc48029.2020.9075906

U2 - 10.1109/cicc48029.2020.9075906

DO - 10.1109/cicc48029.2020.9075906

M3 - Conference paper

SN - 9781728160313

SP - 1

EP - 4

BT - 2020 IEEE Custom Integrated Circuits Conference (CICC)

T2 - 2020 IEEE Custom Integrated Circuits Conference (CICC)

Y2 - 22 March 2019 through 25 March 2020

ER -

A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI

Abstract

Conference

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SRP19: Strategic Research Programme: Center for model-based system improvement - From Computer-Aided Engineering to Model-Aided Engineering

Cite this

A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI

Abstract

Conference

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SRP19: Strategic Research Programme: Center for model-based system improvement - From Computer-Aided Engineering to Model-Aided Engineering

Cite this