Abstract
Gallium nitride GaN power semiconductors are gaining popularity in high-power traction inverter applications. The phase current can reach up to several hundred amps in such cases. Therefore, paralleling multiple GaN HEMT transistors is undoubtedly a solution for increasing power capability and reducing conduction losses. This paper proposes a highly integrated paralleled GANs power module design (100 V/360 A) based on an insulated metal substrate (IMS). The proposed design provides a low and symmetrical commutation loop inductance, high thermal conductivity, and a cost-effective solution. The double pulse test (DPT) experiment has been successfully implemented at 48V/325A to validate the effectiveness of the proposed design.
Original language | English |
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Title of host publication | 2023 IEEE Vehicle Power and Propulsion Conference, VPPC 2023 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Number of pages | 6 |
ISBN (Electronic) | 9798350344455 |
DOIs | |
Publication status | Published - 2023 |
Event | 19th IEEE Vehicle Power and Propulsion Conference, VPPC 2023 - Milan, Italy Duration: 24 Oct 2023 → 27 Oct 2023 |
Publication series
Name | 2023 IEEE Vehicle Power and Propulsion Conference, VPPC 2023 - Proceedings |
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Conference
Conference | 19th IEEE Vehicle Power and Propulsion Conference, VPPC 2023 |
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Country/Territory | Italy |
City | Milan |
Period | 24/10/23 → 27/10/23 |
Bibliographical note
Funding Information:This research has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 101006943, under the title of URBANIZED (https://urbanized.eu/). The authors also acknowledge Flanders Make for the support to our research group.
Publisher Copyright:
© 2023 IEEE.
Keywords
- GaN HEMT
- high-current
- packaging
- paralleling
- Power module