Projects per year
Abstract
Design and validation of an ESD protected ultra-wideband low noise amplifier is presented in this paper. It features an interstage matching network for gain roll-off compensation to achieve a flat gain over its passband. Evaluated with a chip-on-board approach, the amplifier demonstrates a gain of 11.8 ± 0.3 dB, minimum noise figure (NF) of 2.1 dB, and a group delay variation of ±30 ps from 3 to 5 GHz, even though using a less advanced 0.35-micron BiCMOS technology. Its input, output and power supply are all protected against HBM ESD stress up to 6.5 kV. Measured IIP3 at 4.5 GHz is -5.5 dBm. The core LNA draws 3 mA from a 3-V supply
Original language | English |
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Title of host publication | 2005 IEEE International Conference on Ultra-Wideband |
Publisher | IEEE |
Pages | 525-529 |
Number of pages | 5 |
ISBN (Print) | 0-7803-9397-X |
Publication status | Published - 5 Sept 2005 |
Event | Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet - Stockholm, Sweden Duration: 21 Sept 2009 → 25 Sept 2009 |
Conference
Conference | Finds and Results from the Swedish Cyprus Expedition: A Gender Perspective at the Medelhavsmuseet |
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Country/Territory | Sweden |
City | Stockholm |
Period | 21/09/09 → 25/09/09 |
Keywords
- low noise amplifiers
- MMIC amplifiers
- ultra wideband technology
Fingerprint
Dive into the research topics of 'A 6.5-kV ESD protected 3-5-GHz ultra-wideband BiCMOS low noise amplifier using interstage gain roll-off compensation'. Together they form a unique fingerprint.Projects
- 3 Finished
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IWT293: Design of high speed CMOS baseband circuits for wireless applications
1/01/06 → 31/12/09
Project: Fundamental
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IWT151: A project of mixed-signals for 5GHz WPAN transceivers.
1/01/02 → 31/12/05
Project: Fundamental