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A CMOS IQ Digital Doherty Transmitter Using Modulated Tuning Capacitors

  • Wagdy Gaber Mahdi Hussein
  • , Piet Wambacq
  • , Jan Craninckx
  • , Mark Ingels

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

26 Citations (Scopus)

Abstract

This paper presents a new approach to increase the output power and to enhance the drain efficiency of Direct Digital RF Modulators (DDRM). Two differential four-phase DDRMs are organized in a Doherty-like configuration using two different transformers. The modulated tuning capacitors concept is proposed to achieve a high efficiency at maximum output power and at back-off. To demonstrate this principle, a 2 GHz IQ Digital Doherty Transmitter with on-chip transformers has been integrated in 90 nm CMOS Technology. The digital IQ transmitter achieves a maximum output power of 24.8 dBm with 26% drain efficiency and 26% drain efficiency at 6 dB back-off. With a 10 MHz RFBW multi-tone OFDM signal, the transmitter consumes 176 mA from a 2.4 V supply. It achieves 18.8 dBm RMS output power with 18% average drain efficiency.
Original languageEnglish
Title of host publicationIEEE European Solid-State Circuits Conference (ESSCIRC)
Publication statusPublished - 20 Sept 2012
EventESSCIRC 2012 - 38th European Solid State Circuits Conference - Bordeaux, France
Duration: 17 Sept 2012 → 21 Sept 2012

Publication series

NameIEEE European Solid-State Circuits Conference (ESSCIRC)

Conference

ConferenceESSCIRC 2012 - 38th European Solid State Circuits Conference
Country/TerritoryFrance
CityBordeaux
Period17/09/12 → 21/09/12

Keywords

  • CMOS
  • IQ
  • DDRM
  • Doherty
  • PA
  • Efficiency

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