A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psatand 24.3 % PAE in a 250-nm InP HBT Technology

Arno Hemelhof; Sehoon Park; Yang Zhang; Mark Ingels; Giuseppe Gramegna; Kristof Vaesen; Dongyang Yan; Piet Wambacq

doi:10.1109/BCICTS59662.2024.10745714

A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P_satand 24.3 % PAE in a 250-nm InP HBT Technology

Arno Hemelhof, Sehoon Park, Yang Zhang, Mark Ingels, Giuseppe Gramegna, Kristof Vaesen, Dongyang Yan, Piet Wambacq

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research

1 Citation (Scopus)

4 Downloads (Pure)

Abstract

This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3%. A small-signal gain of 14.2 dB is obtained with a 3-dB bandwidth of 19 GHz.

Original language	English
Title of host publication	2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	185-188
Number of pages <span style="color:red"p> <font size="1.5"> ✽ </span> </font>	4
ISBN (Electronic)	9798331541248
DOIs	https://doi.org/10.1109/BCICTS59662.2024.10745714
Publication status	Published - 2024
Event	2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024 - Fort Lauderdale, United States Duration: 27 Oct 2024 → 30 Oct 2024

Publication series

Name	2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024

Conference

Conference	2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024
Country/Territory	United States
City	Fort Lauderdale
Period	27/10/24 → 30/10/24

Bibliographical note

Funding Information:
This work is supported by the Research Foundation-Flanders (FWO) project 1SH6T24N.

Publisher Copyright:
© 2024 IEEE.

Keywords

common-base
D-band
InP
millimeter-wave
power amplifier
stacked PA

Access to Document

10.1109/BCICTS59662.2024.10745714

202410_BCICTS_Hemelhof_A_AcceptedAccepted author manuscript, 3.42 MBLicence: CC BY

Cite this

Hemelhof, A., Park, S., Zhang, Y., Ingels, M., Gramegna, G., Vaesen, K., Yan, D., & Wambacq, P. (2024). A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P_satand 24.3 % PAE in a 250-nm InP HBT Technology. In 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024 (pp. 185-188). (2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS59662.2024.10745714

Hemelhof, Arno ; Park, Sehoon ; Zhang, Yang ; Ingels, Mark ; Gramegna, Giuseppe ; Vaesen, Kristof ; Yan, Dongyang ; Wambacq, Piet. / A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P_satand 24.3 % PAE in a 250-nm InP HBT Technology. 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024. Institute of Electrical and Electronics Engineers Inc., 2024. pp. 185-188 (2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024).

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title = "A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psatand 24.3 % PAE in a 250-nm InP HBT Technology",

abstract = "This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3%. A small-signal gain of 14.2 dB is obtained with a 3-dB bandwidth of 19 GHz.",

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author = "Arno Hemelhof and Sehoon Park and Yang Zhang and Mark Ingels and Giuseppe Gramegna and Kristof Vaesen and Dongyang Yan and Piet Wambacq",

note = "Funding Information: This work is supported by the Research Foundation-Flanders (FWO) project 1SH6T24N. Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024 ; Conference date: 27-10-2024 Through 30-10-2024",

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Hemelhof, A, Park, S, Zhang, Y, Ingels, M, Gramegna, G, Vaesen, K, Yan, D & Wambacq, P 2024, A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P_satand 24.3 % PAE in a 250-nm InP HBT Technology. in 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024. 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Institute of Electrical and Electronics Engineers Inc., pp. 185-188, 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, United States, 27/10/24. https://doi.org/10.1109/BCICTS59662.2024.10745714

A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P_satand 24.3 % PAE in a 250-nm InP HBT Technology. / Hemelhof, Arno; Park, Sehoon; Zhang, Yang; Ingels, Mark; Gramegna, Giuseppe; Vaesen, Kristof; Yan, Dongyang ; Wambacq, Piet.

2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024. Institute of Electrical and Electronics Engineers Inc., 2024. p. 185-188 (2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › Research

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AU - Hemelhof, Arno

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AU - Zhang, Yang

AU - Ingels, Mark

AU - Gramegna, Giuseppe

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AB - This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3%. A small-signal gain of 14.2 dB is obtained with a 3-dB bandwidth of 19 GHz.

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KW - InP

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Hemelhof A, Park S, Zhang Y, Ingels M, Gramegna G, Vaesen K et al. A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P_satand 24.3 % PAE in a 250-nm InP HBT Technology. In 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024. Institute of Electrical and Electronics Engineers Inc. 2024. p. 185-188. (2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024). https://doi.org/10.1109/BCICTS59662.2024.10745714

A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P_satand 24.3 % PAE in a 250-nm InP HBT Technology

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

FWOSB149: Design of Robust High-Efficiency D-band Power Amplifiers in InP for 6G Applications

Cite this

A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psatand 24.3 % PAE in a 250-nm InP HBT Technology

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Projects

FWOSB149: Design of Robust High-Efficiency D-band Power Amplifiers in InP for 6G Applications

Cite this

A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm P_satand 24.3 % PAE in a 250-nm InP HBT Technology