Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

Research output: Chapter in Book/Report/Conference proceedingConference paperResearch

Abstract

The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 % at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.
Original languageEnglish
Title of host publicationSilicon Photonics
EditorsGraham T. Reed, Andrew P. Knights
Place of PublicationSan Francisco
Pages-
Number of pages8
Volume12006
EditionXVII
ISBN (Electronic)9781510648838
DOIs
Publication statusPublished - 5 Mar 2022

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume12006
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Fingerprint

Dive into the research topics of 'Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths'. Together they form a unique fingerprint.

Cite this