Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

Gobinath Jegannathan

doi:10.1117/12.2608691

Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

Gobinath Jegannathan

Electronics and Informatics

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

1 Citation (Scopus)

Abstract

The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 % at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.

Original language	English
Title of host publication	Silicon Photonics
Editors	Graham T. Reed, Andrew P. Knights
Place of Publication	San Francisco
Pages	-
Number of pages	8
Volume	12006
Edition	XVII
ISBN (Electronic)	9781510648838
DOIs	https://doi.org/10.1117/12.2608691
Publication status	Published - 5 Mar 2022

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12006
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

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@inproceedings{204a5e9a6854486193da37a4dbcf1e7c,

title = "Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths",

abstract = "The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 \% at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.",

keywords = "Geiger, CMOS, SPAD, Current-Assistance, drift field, NIR",

author = "Gobinath Jegannathan",

year = "2022",

month = mar,

day = "5",

doi = "10.1117/12.2608691",

language = "English",

isbn = "978-1-5106-4883-8",

volume = "12006",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "--",

editor = "Reed, \{Graham T.\} and Knights, \{Andrew P.\}",

booktitle = "Silicon Photonics",

edition = "XVII",

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Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths. / Jegannathan, Gobinath.
Silicon Photonics. ed. / Graham T. Reed; Andrew P. Knights. Vol. 12006 XVII. ed. San Francisco, 2022. p. - 1200608 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12006).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

TY - GEN

T1 - Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

AU - Jegannathan, Gobinath

PY - 2022/3/5

Y1 - 2022/3/5

N2 - The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 % at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.

AB - The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 % at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.

KW - Geiger

KW - CMOS

KW - SPAD

KW - Current-Assistance

KW - drift field

KW - NIR

UR - https://www.scopus.com/pages/publications/85131222182

U2 - 10.1117/12.2608691

DO - 10.1117/12.2608691

M3 - Conference paper

SN - 978-1-5106-4883-8

VL - 12006

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - -

BT - Silicon Photonics

A2 - Reed, Graham T.

A2 - Knights, Andrew P.

CY - San Francisco

ER -

Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

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