An integrated 132-147GHz power source with +27dBm EIRP

Akshay Visweswaran, Alexander Haag, Carmine de Martino, Karina Schneider, Tim Maiwald, Bastien Vignon, Klaus Aufinger, Marco Spirito, Thomas Zwick, Piet Wambacq

Research output: Chapter in Book/Report/Conference proceedingConference paper

13 Citations (Scopus)

Abstract

We present a 132-147GHz power source based on four power amplifiers whose outputs are combined into a compact (0.52x0.48mm2 footprint) dielectric resonator antenna mounted on the chip face. The source, prototyped in 0.13μm SiGe BiCMOS, demonstrates an EIRP of 27dBm with a power-added efficiency of 13.8 %. Individual PAs deliver a peak Psat of 15dBm over a 3-dB bandwidth of 116-152GHz. Excited by shorted patches on chip, the maximum efficiency of the hybrid antenna is 80% over a 16% relative bandwidth. The EIRP and transmitted RF power are the highest reported for D-band silicon-based transmitters.

Original languageEnglish
Title of host publicationProceedings of the 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
PublisherIEEE
Pages219-222
Number of pages4
ISBN (Electronic)9781728168098
DOIs
Publication statusPublished - Aug 2020
Event2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) -
Duration: 4 Aug 20206 Aug 2020

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Volume2020-August
ISSN (Print)1529-2517

Conference

Conference2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Period4/08/206/08/20

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