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Abstract
We present a 132-147GHz power source based on four power amplifiers whose outputs are combined into a compact (0.52x0.48mm2 footprint) dielectric resonator antenna mounted on the chip face. The source, prototyped in 0.13μm SiGe BiCMOS, demonstrates an EIRP of 27dBm with a power-added efficiency of 13.8 %. Individual PAs deliver a peak Psat of 15dBm over a 3-dB bandwidth of 116-152GHz. Excited by shorted patches on chip, the maximum efficiency of the hybrid antenna is 80% over a 16% relative bandwidth. The EIRP and transmitted RF power are the highest reported for D-band silicon-based transmitters.
Original language | English |
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Title of host publication | Proceedings of the 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) |
Publisher | IEEE |
Pages | 219-222 |
Number of pages | 4 |
ISBN (Electronic) | 9781728168098 |
DOIs | |
Publication status | Published - Aug 2020 |
Event | 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) - Duration: 4 Aug 2020 → 6 Aug 2020 |
Publication series
Name | Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium |
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Volume | 2020-August |
ISSN (Print) | 1529-2517 |
Conference
Conference | 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) |
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Period | 4/08/20 → 6/08/20 |
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