Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Hao Yu, B. Parvais, U. Peralagu, R. Y. Elkashlan, R. Rodriguez, A. Khaled, S. Yadav, A. Alian, M. Zhao, N. De Almeida Braga, J. Cobb, J. Fang, P. Cardinael, A. Sibaja-Hernandez, Nadine Collaert

Research output: Chapter in Book/Report/Conference proceedingConference paperResearch

1 Citation (Scopus)

Abstract

Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (Ron) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density Nsh in the GaN channel (50% increased Nsh results in 30% less Delta mathrm{R} -{on}) and inserting an additional intrinsic AlGaN BB (100 nm AlGaN with 50% less Delta mathrm{R} -{on}). We propose a novel flat-AlGaN-BB-energy-band designing criterion for the AlGaN/C-GaN BB combination.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3061-3064
Number of pages4
ISBN (Electronic)9781665489591
DOIs
Publication statusPublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

Name2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
ISSN (Print)2380-9248

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Copyright:
Copyright 2023 Elsevier B.V., All rights reserved.

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