Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Hao Yu; B. Parvais; U. Peralagu; R. Y. Elkashlan; R. Rodriguez; A. Khaled; S. Yadav; A. Alian; M. Zhao; N. De Almeida Braga; J. Cobb; J. Fang; P. Cardinael; A. Sibaja-Hernandez; Nadine Collaert

doi:10.1109/IEDM45625.2022.10019489

Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Hao Yu, B. Parvais, U. Peralagu, R. Y. Elkashlan, R. Rodriguez, A. Khaled, S. Yadav, A. Alian, M. Zhao, N. De Almeida Braga, J. Cobb, J. Fang, P. Cardinael, A. Sibaja-Hernandez, Nadine Collaert

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

12 Citations (Scopus)

Abstract

Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (Ron) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density Nsh in the GaN channel (50% increased Nsh results in 30% less Delta mathrm{R} -{on}) and inserting an additional intrinsic AlGaN BB (100 nm AlGaN with 50% less Delta mathrm{R} -{on}). We propose a novel flat-AlGaN-BB-energy-band designing criterion for the AlGaN/C-GaN BB combination.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3061-3064
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019489
Publication status	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 3 Dec 2022 → 7 Dec 2022

Publication series

Name	2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
ISSN (Print)	2380-9248

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	3/12/22 → 7/12/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Copyright:
Copyright 2023 Elsevier B.V., All rights reserved.

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10.1109/IEDM45625.2022.10019489

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Yu, H., Parvais, B., Peralagu, U., Elkashlan, R. Y., Rodriguez, R., Khaled, A., Yadav, S., Alian, A., Zhao, M., De Almeida Braga, N., Cobb, J., Fang, J., Cardinael, P., Sibaja-Hernandez, A., & Collaert, N. (2022). Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 3061-3064). (2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019489

@inproceedings{548b9342dabc4d35a3ebc39bc18ab3f4,

title = "Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions",

abstract = "Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (Ron) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density Nsh in the GaN channel (50% increased Nsh results in 30% less Delta mathrm{R} -{on}) and inserting an additional intrinsic AlGaN BB (100 nm AlGaN with 50% less Delta mathrm{R} -{on}). We propose a novel flat-AlGaN-BB-energy-band designing criterion for the AlGaN/C-GaN BB combination. ",

author = "Hao Yu and B. Parvais and U. Peralagu and Elkashlan, {R. Y.} and R. Rodriguez and A. Khaled and S. Yadav and A. Alian and M. Zhao and {De Almeida Braga}, N. and J. Cobb and J. Fang and P. Cardinael and A. Sibaja-Hernandez and Nadine Collaert",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE. Copyright: Copyright 2023 Elsevier B.V., All rights reserved.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019489",

language = "English",

series = "2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3061--3064",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "United States",

}

Yu, H, Parvais, B, Peralagu, U, Elkashlan, RY, Rodriguez, R, Khaled, A, Yadav, S, Alian, A, Zhao, M, De Almeida Braga, N, Cobb, J, Fang, J, Cardinael, P, Sibaja-Hernandez, A & Collaert, N 2022, Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions. in 2022 International Electron Devices Meeting, IEDM 2022. 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 3061-3064, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019489

Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions. / Yu, Hao; Parvais, B.; Peralagu, U. et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 3061-3064 (2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

TY - GEN

T1 - Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT

T2 - 2022 International Electron Devices Meeting, IEDM 2022

AU - Yu, Hao

AU - Parvais, B.

AU - Peralagu, U.

AU - Elkashlan, R. Y.

AU - Rodriguez, R.

AU - Khaled, A.

AU - Yadav, S.

AU - Alian, A.

AU - Zhao, M.

AU - De Almeida Braga, N.

AU - Cobb, J.

AU - Fang, J.

AU - Cardinael, P.

AU - Sibaja-Hernandez, A.

AU - Collaert, Nadine

PY - 2022

Y1 - 2022

N2 - Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (Ron) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density Nsh in the GaN channel (50% increased Nsh results in 30% less Delta mathrm{R} -{on}) and inserting an additional intrinsic AlGaN BB (100 nm AlGaN with 50% less Delta mathrm{R} -{on}). We propose a novel flat-AlGaN-BB-energy-band designing criterion for the AlGaN/C-GaN BB combination.

AB - Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (Ron) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density Nsh in the GaN channel (50% increased Nsh results in 30% less Delta mathrm{R} -{on}) and inserting an additional intrinsic AlGaN BB (100 nm AlGaN with 50% less Delta mathrm{R} -{on}). We propose a novel flat-AlGaN-BB-energy-band designing criterion for the AlGaN/C-GaN BB combination.

UR - http://www.scopus.com/inward/record.url?scp=85147504866&partnerID=8YFLogxK

U2 - 10.1109/IEDM45625.2022.10019489

DO - 10.1109/IEDM45625.2022.10019489

M3 - Conference paper

AN - SCOPUS:85147504866

T3 - 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM

SP - 3061

EP - 3064

BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 3 December 2022 through 7 December 2022

ER -

Yu H, Parvais B, Peralagu U, Elkashlan RY, Rodriguez R, Khaled A et al. Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 3061-3064. (2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM). doi: 10.1109/IEDM45625.2022.10019489

Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

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