Characterization and modeling of n-channel bulk FinFETs from DC to high frequency

Ramendra Singh, Pragya Kushwaha, Sudip Ghosh, Bertrand Parvais, Yogesh S. Chauhan, Abhisek Dixit

Research output: Chapter in Book/Report/Conference proceedingConference paper

3 Citations (Scopus)

Abstract

RF CMOS technology provides a platform for the production of analog, digital and RF circuits on a single chip for futuristic high-level integration. This facilitates the need for a robust compact model for RF FinFETs to study the circuits in a precise and convenient way. In this paper, we have characterized 14-nm N-channel bulk FinFETs by performing two-port S-parameter measurements. Further, BSIM-CMG model for common multiple gate devices is used to accurately capture the RF behavior of the device.

Original languageEnglish
Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
Volume2017-January
ISBN (Electronic)9781538629079
DOIs
Publication statusPublished - 1 Dec 2017
Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan, Province of China
Duration: 18 Oct 201720 Oct 2017

Conference

Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
CountryTaiwan, Province of China
CityHsinchu
Period18/10/1720/10/17

Keywords

  • BSIM-CMG
  • FinFETs
  • Modeling
  • Radio Frequency (RF)
  • S-Parameter Measurement.

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