CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

U. Peralagu, B. De Jaeger, D. M. Fleetwood, P. Wambacq, M. Zhao, B. Parvais, N. Waldron, N. Collaert, A. Alian, V. Putcha, A. Khaled, R. Rodriguez, A. Sibaja-Hernandez, S. Chang, E. Simoen, S. E. Zhao

Research output: Chapter in Book/Report/Conference proceedingConference paper

32 Citations (Scopus)

Abstract

We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE International Electron Devices Meeting
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages17.2.1-17.2.4
ISBN (Electronic)9781728140315
DOIs
Publication statusPublished - Dec 2019
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 7 Dec 201911 Dec 2019

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period7/12/1911/12/19

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