Current assisted avalanche photo diodes (CAAPDs) with separate absorption and multiplication region in conventional CMOS

Research output: Contribution to journalLetter

2 Citations (Scopus)

Abstract

A current assisted avalanche photodetector (CAAPD) is presented with a large detection window of 40 × 40 μm2, having a small 1-fF avalanche diode in its center. To quickly guide the photogenerated electrons to the center for avalanche multiplication, a drift field with associated majority hole current is applied across the neutral detection volume. This first type of CAAPD is fabricated in a conventional 350-nm CMOS process on a high resistive p− epi-layer. The low diode-junction capacitance can be of interest to integrated receivers. The CAAPD is characterized for its basic functionality, including the effects of lateral detection delay and gain.
Original languageEnglish
Article numberdoi: 10.1063/1.5116102
Pages (from-to)115, 132101-1-5
Number of pages5
JournalApplied Physics Letters
Volume115
Issue number12
DOIs
Publication statusPublished - 23 Sep 2019

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