DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

S. Yadav, A. Vais, R. Y. Elkashlan, L. Witters, K. Vondkar, Y. Mols, A. Walke, H. Yu, R. Alcotte, M. Ingels, P. Wambacq, R. Langer, B. Kunert, N. Waldron, B. Parvais, N. Collaert

Research output: Chapter in Book/Report/Conference proceedingConference paper

3 Citations (Scopus)

Abstract

Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.

Original languageEnglish
Title of host publicationEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages89-92
Number of pages4
ISBN (Electronic)9782874870606
Publication statusPublished - 10 Jan 2021
Event15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands
Duration: 11 Jan 202112 Jan 2021

Publication series

NameEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

Conference

Conference15th European Microwave Integrated Circuits Conference, EuMIC 2020
CountryNetherlands
CityUtrecht
Period11/01/2112/01/21

Keywords

  • 5G
  • heterogenous integration
  • III-V HBTs on Si

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