Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications

Dongyang Yan, Mark Ingels, Giovanni Mangraviti, Yao Liu, Bertrand Parvais, Niamh Waldron, Nadine Collaert, Piet Wambacq

Research output: Chapter in Book/Report/Conference proceedingConference paper

1 Citation (Scopus)

Abstract

This paper describes the design of a 28 GHz power amplifier (PA) in a commercial GaAs mHEMT technology using concepts that are typical for mm-wave CMOS design. Simulations show a 1dB output compression point of around 23 dBm with a 30% power-added efficiency (PAE) at 28 GHz, while providing a gain of 12 dB. Comparison with the performance of a similar 28 GHz fully-depleted Silicon-On-Insulator (FDSOI) PA shows an increase of the compression point with 10 dB while efficiency is comparable. The high compression point of this GaAsPA offers a margin for system optimization such as a reduction of the number of antennas for beamforming.

Original languageEnglish
Title of host publication17th IEEE International New Circuits and Systems Conference, NEWCAS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728110318
DOIs
Publication statusPublished - 1 Jun 2019
Event17th IEEE International New Circuits and Systems Conference, NEWCAS 2019 - Munich, Germany
Duration: 23 Jun 201926 Jun 2019

Publication series

Name17th IEEE International New Circuits and Systems Conference, NEWCAS 2019

Conference

Conference17th IEEE International New Circuits and Systems Conference, NEWCAS 2019
CountryGermany
CityMunich
Period23/06/1926/06/19

Keywords

  • 28GHz
  • 5G
  • FD-SOI
  • GaAs

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