Design of A D-band Transformer-Based Neutralized Class-AB Power Amplifier in Silicon Technologies

Xinyan Tang, Alaaeldien Medra, Johan Hoang-Dung Nguyen, Khaled Khalaf, Bjorn Debaillie, Piet Wambacq

Research output: Chapter in Book/Report/Conference proceedingConference paper

2 Citations (Scopus)

Abstract

High-speed wireless communication in the post-5G era will likely make use of frequency bands above 100 GHz. This poses challenges to IC design in silicon technologies. This paper presents a general comparison of a D-band transformer-based Class-AB power amplifier with cross-coupled capacitive neutralization in three advanced silicon technologies: bulk CMOS, fullydepleted SOI, and SiGe BiCMOS. Each of these technologies has its own prospects and disadvantages. A comparison of performance parameters is made such as the maximum available power gain Gmax , saturation power Psat , drain efficiency DE and power added efficiency PAE after properly sizing the transistors to reach an optimum load resistance Ropt . Further, a 140 GHz 4-stage power amplifier is fabricated in a 28 nm bulk CMOS process as a reference. Its design considerations, layout parasitics analysis, and layout techniques are discussed as well.
Original languageEnglish
Title of host publication2019 17th IEEE International New Circuits and Systems Conference (NEWCAS)
PublisherIEEE
Pages1-4
Number of pages4
ISBN (Electronic)978-1-7281-1031-8
ISBN (Print)978-1-7281-1032-5
DOIs
Publication statusPublished - 23 Jun 2019
Event2019 17th IEEE International New Circuits and Systems Conference (NEWCAS) - Munich, Germany, Munich, Germany
Duration: 23 Jun 201926 Jun 2019
https://www.newcas2019.org/

Conference

Conference2019 17th IEEE International New Circuits and Systems Conference (NEWCAS)
Abbreviated titleNEWCAS
CountryGermany
CityMunich
Period23/06/1926/06/19
Internet address

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