First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

A. Vais, R. Alcotte, M. Ingels, P. Wambacq, B. Parvais, R. Langer, B. Kunert, N. Waldron, N. Collaert, L. Witters, Y. Mols, A. S. Hernandez, A. Walke, H. Yu, M. Baryshnikova, G. Mannaert, V. Deshpande

Research output: Chapter in Book/Report/Conference proceedingConference paper

5 Citations (Scopus)

Abstract

In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages178-181
Number of pages4
ISBN (Electronic)9781728140315
DOIs
Publication statusPublished - Dec 2019
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 7 Dec 201911 Dec 2019

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period7/12/1911/12/19

Fingerprint

Dive into the research topics of 'First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering'. Together they form a unique fingerprint.

Cite this