Frequency response of an on-chip multi-wavelength laser subject to optical injection with single sideband modulation

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Abstract

In this report, we experimentally analyze the effect of optical injection of a signal with a single-sideband (SSB) modulation on a multi-wavelength laser (MWL) integrated on a photonic integrated circuit. The optical injection of an SSB modulation into the MWL leads to spectral multiplication of the signal around the un-injected modes of the MWL. This multiplication arises from the modulation of the carrier density inside the cavity and the strong nonlinear coupling between different modes of the MWL. We report an asymmetric power evolution of the generated sidebands around the injected and un-injected modes of the MWL while the modulation frequency is swept. The power and modulation bandwidth of the signal emerging around the injected and un-injected modes strongly depend on the position of the cavity resonance frequency of the injected mode, which can be tailored by adjusting the injection strength and the detuning of the injected signal.
Original languageEnglish
Title of host publicationFrequency response of an on-chip multi-wavelength laser subject to optical injection with single sideband modulation
EditorsMarc Sciamanna, Fan-Yi Lin, Jesper Mork
PublisherSPIE
Pages1-6
Number of pages <span style="color:red"p> <font size="1.5"> ✽ </span> </font>6
Volume13002
DOIs
Publication statusPublished - 2024
EventSEMICONDUCTOR LASERS AND LASER DYNAMICS XI - Strasbourg, Strasbourg, France
Duration: 9 Apr 202411 Apr 2024

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume13002
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSEMICONDUCTOR LASERS AND LASER DYNAMICS XI
Country/TerritoryFrance
CityStrasbourg
Period9/04/2411/04/24

Bibliographical note

Funding Information:
This work was supported by the European Research Council (ERC, Starting Grant COLOR\u2019UP 948129, MV), the Research Foundation Flanders (FWO, grants 1530318N, G0G0319N, MV, and postdoctoral fellowship grant 1275924N, PMP), the METHUSALEM program of the Flemish Government (Vlaamse Overheid).

Publisher Copyright:
© 2024 SPIE.

Keywords

  • LOCKED SEMICONDUCTOR-LASERSBANDWIDTH-ENHANCED CHAOSDIODE-LASERGENERATIONLOCKINGDYNAMICS

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