Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully-depleted (FD) SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as one of the most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C. Moreover, CMOS-compatible microfabrication processes have been developed in order to build low cost, low power, low voltage MEMS for various applications in RF communications, biomedical engineering, domotic, etc.
|Number of pages||16|
|Specialist publication||Revue HF Tijdschrift|
|Publication status||Published - 1 Jan 2001|