Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

J. P. Raskin; J. Laconte; A. Akheyar; C. Dupont; S. Adriaensen; A. Nève; M. Dehan; B. Parvais; D. Vanhoenacker; L. Demeûs; P. Delatte; V. Dessard; D. Flandre

Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

J. P. Raskin, J. Laconte, A. Akheyar, C. Dupont, S. Adriaensen, A. Nève, M. Dehan, B. Parvais, D. Vanhoenacker, L. Demeûs, P. Delatte, V. Dessard, D. Flandre

Research output: Contribution to specialist/vulgarizing publication › Article › Specialist

1 Citation (Scopus)

Abstract

Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully-depleted (FD) SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as one of the most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C. Moreover, CMOS-compatible microfabrication processes have been developed in order to build low cost, low power, low voltage MEMS for various applications in RF communications, biomedical engineering, domotic, etc.

Original language	English
Pages	53-68
Number of pages	16
No.	2
Specialist publication	Revue HF Tijdschrift
Publication status	Published - 1 Jan 2001

Cite this

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title = "Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems",

abstract = "Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully-depleted (FD) SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as one of the most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C. Moreover, CMOS-compatible microfabrication processes have been developed in order to build low cost, low power, low voltage MEMS for various applications in RF communications, biomedical engineering, domotic, etc.",

author = "Raskin, {J. P.} and J. Laconte and A. Akheyar and C. Dupont and S. Adriaensen and A. N{\`e}ve and M. Dehan and B. Parvais and D. Vanhoenacker and L. Deme{\^u}s and P. Delatte and V. Dessard and D. Flandre",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "53--68",

journal = "Revue E tijdschrift",

issn = "1377-7254",

publisher = "Soci{\'e}t{\'e} Royale Belge des Electriciens",

}

Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems. / Raskin, J. P.; Laconte, J.; Akheyar, A.; Dupont, C.; Adriaensen, S.; Nève, A.; Dehan, M.; Parvais, B.; Vanhoenacker, D.; Demeûs, L.; Delatte, P.; Dessard, V.; Flandre, D.

In: Revue HF Tijdschrift, No. 2, 01.01.2001, p. 53-68.

Research output: Contribution to specialist/vulgarizing publication › Article › Specialist

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T1 - Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

AU - Raskin, J. P.

AU - Laconte, J.

AU - Akheyar, A.

AU - Dupont, C.

AU - Adriaensen, S.

AU - Nève, A.

AU - Dehan, M.

AU - Parvais, B.

AU - Vanhoenacker, D.

AU - Demeûs, L.

AU - Delatte, P.

AU - Dessard, V.

AU - Flandre, D.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully-depleted (FD) SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as one of the most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C. Moreover, CMOS-compatible microfabrication processes have been developed in order to build low cost, low power, low voltage MEMS for various applications in RF communications, biomedical engineering, domotic, etc.

AB - Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully-depleted (FD) SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as one of the most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C. Moreover, CMOS-compatible microfabrication processes have been developed in order to build low cost, low power, low voltage MEMS for various applications in RF communications, biomedical engineering, domotic, etc.

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JO - Revue E tijdschrift

JF - Revue E tijdschrift

SN - 1377-7254

ER -

Fully-depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

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