Fully depleted SOI CMOS technology for heterogeneous micropower, high-temperature or RF microsystems

D. Flandre, S. Adriaensen, A. Akheyar, A. Crahay, L. Demeûs, P. Delatte, V. Dessard, B. Iniguez, A. Nève, B. Katschmarskyj, P. Loumaye, J. Laconte, I. Martinez, G. Picun, E. Rauly, C. Renaux, D. Spôte, M. Zitout, M. Dehan, B. ParvaisP. Simon, D. Vanhoenacker, J. P. Raskin

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

Based on an extensive review of research results on the material, process, device and circuit properties of thin-film fully depleted SOI CMOS, our work demonstrates that such a process with channel lengths of about 1 μm may emerge as a most promising and mature contender for integrated microsystems which must operate under low-voltage low-power conditions, at microwave frequencies and/or in the temperature range 200-350°C.

Original languageEnglish
Pages (from-to)541-549
Number of pages9
JournalSolid-State Electronics
Volume45
Issue number4
DOIs
Publication statusPublished - 1 May 2001

Keywords

  • Double-gate
  • High-temperature
  • Micropower
  • Microsystems
  • RF
  • Silicon-on-insulator

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