GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL

B. Parvais, A. Alian, Uthayasankaran Peralagu, Raul Rodriguez, Sachin Yadav, A. Khaled, R. Y. Elkashlan, V. Putcha, A. Sibaja-Hernandez, M. Zhao, P. Wambacq, Nadine Collaert, N. Waldron

Research output: Chapter in Book/Report/Conference proceedingConference paper

11 Citations (Scopus)

Abstract

We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages8.1.1-8.1.4
ISBN (Electronic)9781728188881
DOIs
Publication statusPublished - 12 Dec 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 12 Dec 202018 Dec 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
CountryUnited States
CityVirtual, San Francisco
Period12/12/2018/12/20

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