Projects per year
We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak gm of 430 mS/mm and an fMAX of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.
|Title of host publication||2020 IEEE International Electron Devices Meeting, IEDM 2020|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 12 Dec 2020|
|Event||66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States|
Duration: 12 Dec 2020 → 18 Dec 2020
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||66th Annual IEEE International Electron Devices Meeting, IEDM 2020|
|City||Virtual, San Francisco|
|Period||12/12/20 → 18/12/20|
FingerprintDive into the research topics of 'GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL'. Together they form a unique fingerprint.
- 1 Active