Generation of four negative differential resistance regions using two resonant tunneling diodes

Kristel Fobelets, Jan Genoe, Roger Vounckx, Gustaaf Borghs

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Original language	English
Pages (from-to)	887-890
Number of pages	4
Journal	Microelectronic Engineering
Volume	19
Issue number	1/apr
Publication status	Published - 1992

Microelectronic Engineering, Vol. 19, Nr. 1-4, pp. 887-890.

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title = "Generation of four negative differential resistance regions using two resonant tunneling diodes",

author = "Kristel Fobelets and Jan Genoe and Roger Vounckx and Gustaaf Borghs",

note = "Microelectronic Engineering, Vol. 19, Nr. 1-4, pp. 887-890.",

year = "1992",

language = "English",

volume = "19",

pages = "887--890",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1/apr",

}

TY - JOUR

T1 - Generation of four negative differential resistance regions using two resonant tunneling diodes

AU - Fobelets, Kristel

AU - Genoe, Jan

AU - Vounckx, Roger

AU - Borghs, Gustaaf

N1 - Microelectronic Engineering, Vol. 19, Nr. 1-4, pp. 887-890.

PY - 1992

Y1 - 1992

M3 - Article

SN - 0167-9317

VL - 19

SP - 887

EP - 890

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1/apr

ER -