Growth of monocrystalline GeN on a substrate

Ruben Lieten (Inventor), Stefan Degroote (Inventor), Gustaaf Borghs (Inventor)

Research output: Patent


The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550°C and 940°C, exposing the substrate (1 ) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1 ). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).
Original languageEnglish
Patent numberEP2050126B
Priority date20/07/07
Filing date22/04/09
Publication statusPublished - 2019


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