Abstract
The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550°C and 940°C, exposing the substrate (1 ) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1 ). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).
| Original language | English |
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| Patent number | EP2050126B |
| IPC | H01L21/318 |
| Priority date | 20/07/07 |
| Filing date | 22/04/09 |
| Publication status | Published - 2019 |