Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond

L. Ragnarsson; S. A. Chew; H. Dekkers; M. Toledano Luque; B. Parvais; A. De Keersgieter; K. Devriendt; A. Van Ammel; T. Schram; N. Yoshida; A. Phatak; K. Han; B. Colombeau; A. Brand; N. Horiguchi; A. V.Y. Thean

doi:10.1109/VLSIT.2014.6894359

Highly scalable bulk FinFET Devices with Multi-V_T options by conductive metal gate stack tuning for the 10-nm node and beyond

L. Ragnarsson, S. A. Chew, H. Dekkers, M. Toledano Luque, B. Parvais, A. De Keersgieter, K. Devriendt, A. Van Ammel, T. Schram, N. Yoshida, A. Phatak, K. Han, B. Colombeau, A. Brand, N. Horiguchi, A. V.Y. Thean

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

29 Citations (Scopus)

Abstract

A scalable multi-V_T enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-V_T is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ∼400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack T_inv, J_G, D_IT and reliability as well as the device performance are shown to be unaffected by the multi V_T process.

Original language	English
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479933310
DOIs	https://doi.org/10.1109/VLSIT.2014.6894359
Publication status	Published - 8 Sept 2014
Event	34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States Duration: 9 Jun 2014 → 12 Jun 2014

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	34th Symposium on VLSI Technology, VLSIT 2014
Country/Territory	United States
City	Honolulu
Period	9/06/14 → 12/06/14

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10.1109/VLSIT.2014.6894359

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Ragnarsson, L., Chew, S. A., Dekkers, H., Luque, M. T., Parvais, B., De Keersgieter, A., Devriendt, K., Van Ammel, A., Schram, T., Yoshida, N., Phatak, A., Han, K., Colombeau, B., Brand, A., Horiguchi, N., & Thean, A. V. Y. (2014). Highly scalable bulk FinFET Devices with Multi-V_T options by conductive metal gate stack tuning for the 10-nm node and beyond. In Digest of Technical Papers - Symposium on VLSI Technology Article 6894359 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894359

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title = "Highly scalable bulk FinFET Devices with Multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond",

abstract = "A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ∼400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack Tinv, JG, DIT and reliability as well as the device performance are shown to be unaffected by the multi VT process.",

author = "L. Ragnarsson and Chew, {S. A.} and H. Dekkers and Luque, {M. Toledano} and B. Parvais and {De Keersgieter}, A. and K. Devriendt and {Van Ammel}, A. and T. Schram and N. Yoshida and A. Phatak and K. Han and B. Colombeau and A. Brand and N. Horiguchi and Thean, {A. V.Y.}",

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Ragnarsson, L, Chew, SA, Dekkers, H, Luque, MT, Parvais, B, De Keersgieter, A, Devriendt, K, Van Ammel, A, Schram, T, Yoshida, N, Phatak, A, Han, K, Colombeau, B, Brand, A, Horiguchi, N & Thean, AVY 2014, Highly scalable bulk FinFET Devices with Multi-V_T options by conductive metal gate stack tuning for the 10-nm node and beyond. in Digest of Technical Papers - Symposium on VLSI Technology., 6894359, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 9/06/14. https://doi.org/10.1109/VLSIT.2014.6894359

Highly scalable bulk FinFET Devices with Multi-V_T options by conductive metal gate stack tuning for the 10-nm node and beyond. / Ragnarsson, L.; Chew, S. A.; Dekkers, H. et al.
Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894359 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

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AU - Parvais, B.

AU - De Keersgieter, A.

AU - Devriendt, K.

AU - Van Ammel, A.

AU - Schram, T.

AU - Yoshida, N.

AU - Phatak, A.

AU - Han, K.

AU - Colombeau, B.

AU - Brand, A.

AU - Horiguchi, N.

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N2 - A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ∼400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack Tinv, JG, DIT and reliability as well as the device performance are shown to be unaffected by the multi VT process.

AB - A scalable multi-VT enabled RMG CMOS integration process with highly conformal ALD TiN/TiAl/TiN is described. The multi-VT is implemented by metal gate tuning using two different options. The first relies on bottom-barrier thickness control, the second on implantation of nitrogen into the work function metal. A shift in the effective work function (eWF) of ∼400 mV is realized by adjusting the TiN bottom barrier thickness underneath TiAl, while over 200 mV shifts are achieved by means of implantation of nitrogen into ALD TiN/TiAl/TiN. The gate-stack Tinv, JG, DIT and reliability as well as the device performance are shown to be unaffected by the multi VT process.

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Ragnarsson L, Chew SA, Dekkers H, Luque MT, Parvais B, De Keersgieter A et al. Highly scalable bulk FinFET Devices with Multi-V_T options by conductive metal gate stack tuning for the 10-nm node and beyond. In Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894359. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2014.6894359