III-V/III-N technologies for next generation high-capacity wireless communication

N. Collaert; A. Alian; A. Banerjee; G. Boccardi; P. Cardinael; V. Chauhan; C. Desset; R. Elkashlan; A. Khaled; M. Ingels; B. Kunert; Y. Mols; B. O'Sullivan; U. Peralagu; N. Pinho; R. Rodriguez; A. Sibaja-Hernandez; S. Sinha; X. Sun; A. Vais; B. Vermeersch; S. Yadav; D. Yan; H. Yu; Y. Zhang; M. Zhao; J. Van Driessche; G. Gramegna; P. Wambacq; B. Parvais; M. Peeters

doi:10.1109/IEDM45625.2022.10019555

III-V/III-N technologies for next generation high-capacity wireless communication

N. Collaert, A. Alian, A. Banerjee, G. Boccardi, P. Cardinael, V. Chauhan, C. Desset, R. Elkashlan, A. Khaled, M. Ingels, B. Kunert, Y. Mols, B. O'Sullivan, U. Peralagu, N. Pinho, R. Rodriguez, A. Sibaja-Hernandez, S. Sinha, X. Sun, A. VaisB. Vermeersch, S. Yadav, D. Yan, H. Yu, Y. Zhang, M. Zhao, J. Van Driessche, G. Gramegna, P. Wambacq, B. Parvais, M. Peeters

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

7 Citations (Scopus)

Abstract

In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1151-1154
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019555
Publication status	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 3 Dec 2022 → 7 Dec 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	3/12/22 → 7/12/22

Bibliographical note

Funding Information:
ACKNOWLEDGMENT The contributions of the Advanced RF and 3D system integration research teams at imec are acknowledged. This work is supported by imec’s IIAP program members and partially supported by the H2020 project COREnect (Grant Agreement no. 956830). REFERENCES

Publisher Copyright:
© 2022 IEEE.

Copyright:
Copyright 2023 Elsevier B.V., All rights reserved.

Access to Document

10.1109/IEDM45625.2022.10019555

Cite this

Collaert, N., Alian, A., Banerjee, A., Boccardi, G., Cardinael, P., Chauhan, V., Desset, C., Elkashlan, R., Khaled, A., Ingels, M., Kunert, B., Mols, Y., O'Sullivan, B., Peralagu, U., Pinho, N., Rodriguez, R., Sibaja-Hernandez, A., Sinha, S., Sun, X., ... Peeters, M. (2022). III-V/III-N technologies for next generation high-capacity wireless communication. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 1151-1154). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019555

@inproceedings{231e4d0540f048b9b77e9f40a93fee3f,

title = "III-V/III-N technologies for next generation high-capacity wireless communication",

abstract = "In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication. ",

author = "N. Collaert and A. Alian and A. Banerjee and G. Boccardi and P. Cardinael and V. Chauhan and C. Desset and R. Elkashlan and A. Khaled and M. Ingels and B. Kunert and Y. Mols and B. O'Sullivan and U. Peralagu and N. Pinho and R. Rodriguez and A. Sibaja-Hernandez and S. Sinha and X. Sun and A. Vais and B. Vermeersch and S. Yadav and D. Yan and H. Yu and Y. Zhang and M. Zhao and {Van Driessche}, J. and G. Gramegna and P. Wambacq and B. Parvais and M. Peeters",

note = "Funding Information: ACKNOWLEDGMENT The contributions of the Advanced RF and 3D system integration research teams at imec are acknowledged. This work is supported by imec{\textquoteright}s IIAP program members and partially supported by the H2020 project COREnect (Grant Agreement no. 956830). REFERENCES Publisher Copyright: {\textcopyright} 2022 IEEE. Copyright: Copyright 2023 Elsevier B.V., All rights reserved.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019555",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1151--1154",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "United States",

}

Collaert, N, Alian, A, Banerjee, A, Boccardi, G, Cardinael, P, Chauhan, V, Desset, C, Elkashlan, R, Khaled, A, Ingels, M, Kunert, B, Mols, Y, O'Sullivan, B, Peralagu, U, Pinho, N, Rodriguez, R, Sibaja-Hernandez, A, Sinha, S, Sun, X, Vais, A, Vermeersch, B, Yadav, S, Yan, D, Yu, H, Zhang, Y, Zhao, M, Van Driessche, J, Gramegna, G, Wambacq, P , Parvais, B & Peeters, M 2022, III-V/III-N technologies for next generation high-capacity wireless communication. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 1151-1154, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019555

III-V/III-N technologies for next generation high-capacity wireless communication. / Collaert, N.; Alian, A.; Banerjee, A. et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1151-1154 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

TY - GEN

T1 - III-V/III-N technologies for next generation high-capacity wireless communication

AU - Collaert, N.

AU - Alian, A.

AU - Banerjee, A.

AU - Boccardi, G.

AU - Cardinael, P.

AU - Chauhan, V.

AU - Desset, C.

AU - Elkashlan, R.

AU - Khaled, A.

AU - Ingels, M.

AU - Kunert, B.

AU - Mols, Y.

AU - O'Sullivan, B.

AU - Peralagu, U.

AU - Pinho, N.

AU - Rodriguez, R.

AU - Sibaja-Hernandez, A.

AU - Sinha, S.

AU - Sun, X.

AU - Vais, A.

AU - Vermeersch, B.

AU - Yadav, S.

AU - Yan, D.

AU - Yu, H.

AU - Zhang, Y.

AU - Zhao, M.

AU - Van Driessche, J.

AU - Gramegna, G.

AU - Wambacq, P.

AU - Parvais, B.

AU - Peeters, M.

N1 - Funding Information: ACKNOWLEDGMENT The contributions of the Advanced RF and 3D system integration research teams at imec are acknowledged. This work is supported by imec’s IIAP program members and partially supported by the H2020 project COREnect (Grant Agreement no. 956830). REFERENCES Publisher Copyright: © 2022 IEEE. Copyright: Copyright 2023 Elsevier B.V., All rights reserved.

PY - 2022

Y1 - 2022

N2 - In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication.

AB - In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication.

UR - http://www.scopus.com/inward/record.url?scp=85147503801&partnerID=8YFLogxK

U2 - 10.1109/IEDM45625.2022.10019555

DO - 10.1109/IEDM45625.2022.10019555

M3 - Conference paper

AN - SCOPUS:85147503801

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 1151

EP - 1154

BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Electron Devices Meeting, IEDM 2022

Y2 - 3 December 2022 through 7 December 2022

ER -

Collaert N, Alian A, Banerjee A, Boccardi G, Cardinael P, Chauhan V et al. III-V/III-N technologies for next generation high-capacity wireless communication. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1151-1154. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019555

III-V/III-N technologies for next generation high-capacity wireless communication

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Other files and links

Fingerprint

SRP19: Strategic Research Programme: Center for model-based system improvement - From Computer-Aided Engineering to Model-Aided Engineering

Cite this

III-V/III-N technologies for next generation high-capacity wireless communication

Abstract

Publication series

Conference

Bibliographical note

Access to Document

Other files and links

Fingerprint

Projects

SRP19: Strategic Research Programme: Center for model-based system improvement - From Computer-Aided Engineering to Model-Aided Engineering

Cite this