III-V/III-N technologies for next generation high-capacity wireless communication

N. Collaert, A. Alian, A. Banerjee, G. Boccardi, P. Cardinael, V. Chauhan, C. Desset, R. Elkashlan, A. Khaled, M. Ingels, B. Kunert, Y. Mols, B. O'Sullivan, U. Peralagu, N. Pinho, R. Rodriguez, A. Sibaja-Hernandez, S. Sinha, X. Sun, A. VaisB. Vermeersch, S. Yadav, D. Yan, H. Yu, Y. Zhang, M. Zhao, J. Van Driessche, G. Gramegna, P. Wambacq, B. Parvais, M. Peeters

Research output: Chapter in Book/Report/Conference proceedingConference paperResearch

Abstract

In this paper, we will discuss the progress that has been made in upscaling GaN and InP to a Si platform as well as making them CMOS and 3D compatible to enable the heterogeneous systems that will be needed for 5G mm-wave and 6G sub-THz frequencies for high-capacity wireless communication.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1151-1154
Number of pages4
ISBN (Electronic)9781665489591
DOIs
Publication statusPublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

Bibliographical note

Funding Information:
ACKNOWLEDGMENT The contributions of the Advanced RF and 3D system integration research teams at imec are acknowledged. This work is supported by imec’s IIAP program members and partially supported by the H2020 project COREnect (Grant Agreement no. 956830). REFERENCES

Publisher Copyright:
© 2022 IEEE.

Copyright:
Copyright 2023 Elsevier B.V., All rights reserved.

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