Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring

Farzad Hosseinabadi; Shahid Jaman; Sachin Kumar Bhoi; Md Mahamudul Hasan; Sajib Chakraborty; Mohamed El Baghdadi; Omar Hegazy

Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring

Farzad Hosseinabadi, Shahid Jaman, Sachin Kumar Bhoi, Md Mahamudul Hasan, Sajib Chakraborty, Mohamed El Baghdadi, Omar Hegazy

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

5 Citations (Scopus)

Abstract

This paper presents an advanced methodology for mapping junction temperature ( Tj ) based on the drain to source resistance ( Rds,on ) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage ( Vds,on ), drain-source current ( Ids,on ) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between Tj and Rds,on . Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method ( RGint ), gate threshold voltage method ( Vg,th ) and short-circuit current method ( Isc ), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method.

Original language	English
Title of host publication	2022 24th European Conference on Power Electronics and Applications
Publisher	IEEE
Pages	1-6
Number of pages	6
ISBN (Electronic)	978-9-0758-1539-9
ISBN (Print)	978-1-6654-8700-9
Publication status	Published - 17 Oct 2022
Event	2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) - Hanover, Germany Duration: 5 Sept 2022 → 9 Sept 2022 https://epe2022.com/

Conference

Conference	2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
Country/Territory	Germany
City	Hanover
Period	5/09/22 → 9/09/22
Internet address	https://epe2022.com/

Bibliographical note

Funding Information:
This work was supported by HiEFFICIENT project. This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement no. 101007281. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and Austria, Germany, Slovenia, Netherlands, Belgium, Slovakia, France, Italy, and Turkey. We also acknowledge Flanders Make for the support to our research group.

Publisher Copyright:
© 2022 EPE Association.

Copyright:
Copyright 2022 Elsevier B.V., All rights reserved.

Keywords

Junction Temperature Estimation
Reliability
Condition Monitoring
SiC MOSFET
Rds,on

Access to Document

https://ieeexplore.ieee.org/abstract/document/9907607

Cite this

@inproceedings{9a2aa49e33d24a1dbf13be51eb68b215,

title = "Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring",

abstract = "This paper presents an advanced methodology for mapping junction temperature ( Tj ) based on the drain to source resistance ( Rds,on ) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage ( Vds,on ), drain-source current ( Ids,on ) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between Tj and Rds,on . Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method ( RGint ), gate threshold voltage method ( Vg,th ) and short-circuit current method ( Isc ), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method.",

keywords = "Junction Temperature Estimation, Reliability, Condition Monitoring, SiC MOSFET, Rds,on",

author = "Farzad Hosseinabadi and Shahid Jaman and Bhoi, {Sachin Kumar} and Hasan, {Md Mahamudul} and Sajib Chakraborty and {El Baghdadi}, Mohamed and Omar Hegazy",

note = "Funding Information: This work was supported by HiEFFICIENT project. This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement no. 101007281. The JU receives support from the European Union{\textquoteright}s Horizon 2020 research and innovation programme and Austria, Germany, Slovenia, Netherlands, Belgium, Slovakia, France, Italy, and Turkey. We also acknowledge Flanders Make for the support to our research group. Publisher Copyright: {\textcopyright} 2022 EPE Association. Copyright: Copyright 2022 Elsevier B.V., All rights reserved.; 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) ; Conference date: 05-09-2022 Through 09-09-2022",

year = "2022",

month = oct,

day = "17",

language = "English",

isbn = "978-1-6654-8700-9",

pages = "1--6",

booktitle = "2022 24th European Conference on Power Electronics and Applications",

publisher = "IEEE",

url = "https://epe2022.com/",

}

Hosseinabadi, F , Jaman, S , Bhoi, SK , Hasan, MM , Chakraborty, S , El Baghdadi, M & Hegazy, O 2022, Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring. in 2022 24th European Conference on Power Electronics and Applications. IEEE, pp. 1-6, 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 5/09/22. <https://ieeexplore.ieee.org/abstract/document/9907607>

TY - GEN

T1 - Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring

AU - Hosseinabadi, Farzad

AU - Jaman, Shahid

AU - Bhoi, Sachin Kumar

AU - Hasan, Md Mahamudul

AU - Chakraborty, Sajib

AU - El Baghdadi, Mohamed

AU - Hegazy, Omar

N1 - Funding Information: This work was supported by HiEFFICIENT project. This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement no. 101007281. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and Austria, Germany, Slovenia, Netherlands, Belgium, Slovakia, France, Italy, and Turkey. We also acknowledge Flanders Make for the support to our research group. Publisher Copyright: © 2022 EPE Association. Copyright: Copyright 2022 Elsevier B.V., All rights reserved.

PY - 2022/10/17

Y1 - 2022/10/17

N2 - This paper presents an advanced methodology for mapping junction temperature ( Tj ) based on the drain to source resistance ( Rds,on ) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage ( Vds,on ), drain-source current ( Ids,on ) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between Tj and Rds,on . Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method ( RGint ), gate threshold voltage method ( Vg,th ) and short-circuit current method ( Isc ), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method.

AB - This paper presents an advanced methodology for mapping junction temperature ( Tj ) based on the drain to source resistance ( Rds,on ) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage ( Vds,on ), drain-source current ( Ids,on ) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between Tj and Rds,on . Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method ( RGint ), gate threshold voltage method ( Vg,th ) and short-circuit current method ( Isc ), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method.

KW - Junction Temperature Estimation

KW - Reliability

KW - Condition Monitoring

KW - SiC MOSFET

KW - Rds,on

UR - http://www.scopus.com/inward/record.url?scp=85141578420&partnerID=8YFLogxK

M3 - Conference paper

SN - 978-1-6654-8700-9

SP - 1

EP - 6

BT - 2022 24th European Conference on Power Electronics and Applications

PB - IEEE

T2 - 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)

Y2 - 5 September 2022 through 9 September 2022

ER -

Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring

Abstract

Conference

Bibliographical note

Keywords

Access to Document

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Fingerprint

BRGPROV9: OOI Project- ECSEL: HiEfficient

Cite this

Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring

Abstract

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Projects

BRGPROV9: OOI Project- ECSEL: HiEfficient

Cite this