In-situ ellipsometric characterization of the growth of porous anisotropic nanocrystalline ZnO layers

P. Laha, M. Y. Nazarkin, A. V. Volkova, M. M. Simunin, H. Terryn, S. A. Gavrilov, J. Ustarroz

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ZnO films have increasingly been in the spotlight due to their largely varied electro-physical and optical properties. For several applications, porous anisotropic nanocrystalline layers are especially interesting. To study the growth kinetics of such films during different fabrication processes, a powerful non-destructive in-situ technique is required. In this work, both ex-situ and in-situ spectroscopic ellipsometry are used along with advanced modelling techniques that are able to take both the anisotropy and the porosity of the films into account. Scanning electron microscopy, along with nitrogen absorption methods for measuring porosity, validated the ellipsometric data and proposed model. The film, grown by chemical bath deposition, was monitored from around 700 to 1800 nm in thickness. This same principle can now be used to monitor any other porous and/or anisotropic structure in an effective in-situ manner, e.g., growth of porous anodic aluminium oxides, nano-porous silica films, etc.
Original languageEnglish
Article number101904
Number of pages5
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 9 Mar 2015

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