Large-Signal Modeling of On-Wafer Microwave Transistors based on Response Surface Methodology

Pawe Barmuta, Gustavo Avolio, Francesco Ferranti, Arkadiusz Lewandowski, Dominique Schreurs

Research output: Chapter in Book/Report/Conference proceedingConference paperResearch

2 Citations (Scopus)

Abstract

In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.
Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium (IMS 2015)
PublisherIEEE
Pages1-4
Number of pages4
DOIs
Publication statusPublished - 17 May 2015
EventIEEE MTT-S International Microwave Symposium (IMS 2015) - Phoenix, United States
Duration: 17 May 201522 May 2015

Conference

ConferenceIEEE MTT-S International Microwave Symposium (IMS 2015)
Country/TerritoryUnited States
CityPhoenix
Period17/05/1522/05/15

Keywords

  • active device modeling
  • experimental design
  • response surface

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