Abstract
In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.
Original language | English |
---|---|
Title of host publication | IEEE MTT-S International Microwave Symposium (IMS 2015) |
Publisher | IEEE |
Pages | 1-4 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 17 May 2015 |
Event | IEEE MTT-S International Microwave Symposium (IMS 2015) - Phoenix, United States Duration: 17 May 2015 → 22 May 2015 |
Conference
Conference | IEEE MTT-S International Microwave Symposium (IMS 2015) |
---|---|
Country/Territory | United States |
City | Phoenix |
Period | 17/05/15 → 22/05/15 |
Keywords
- active device modeling
- experimental design
- response surface