Large-Signal Modeling of On-Wafer Microwave Transistors based on Response Surface Methodology

Pawe Barmuta; Gustavo Avolio; Francesco Ferranti; Arkadiusz Lewandowski; Dominique Schreurs

doi:10.1109/MWSYM.2015.7167029

Large-Signal Modeling of On-Wafer Microwave Transistors based on Response Surface Methodology

Pawe Barmuta, Gustavo Avolio, Francesco Ferranti, Arkadiusz Lewandowski, Dominique Schreurs

Electricity

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

2 Citations (Scopus)

Abstract

In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Symposium (IMS 2015)
Publisher	IEEE
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2015.7167029
Publication status	Published - 17 May 2015
Event	IEEE MTT-S International Microwave Symposium (IMS 2015) - Phoenix, United States Duration: 17 May 2015 → 22 May 2015

Conference

Conference	IEEE MTT-S International Microwave Symposium (IMS 2015)
Country/Territory	United States
City	Phoenix
Period	17/05/15 → 22/05/15

Keywords

active device modeling
experimental design
response surface

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10.1109/MWSYM.2015.7167029

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@inproceedings{feee3b20014b4933933923e115183937,

title = "Large-Signal Modeling of On-Wafer Microwave Transistors based on Response Surface Methodology",

abstract = "In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.",

keywords = "active device modeling, experimental design, response surface",

author = "Pawe Barmuta and Gustavo Avolio and Francesco Ferranti and Arkadiusz Lewandowski and Dominique Schreurs",

year = "2015",

month = may,

day = "17",

doi = "10.1109/MWSYM.2015.7167029",

language = "English",

pages = "1--4",

booktitle = "IEEE MTT-S International Microwave Symposium (IMS 2015)",

publisher = "IEEE",

note = "IEEE MTT-S International Microwave Symposium (IMS 2015) ; Conference date: 17-05-2015 Through 22-05-2015",

}

Barmuta, P, Avolio, G, Ferranti, F, Lewandowski, A & Schreurs, D 2015, Large-Signal Modeling of On-Wafer Microwave Transistors based on Response Surface Methodology. in IEEE MTT-S International Microwave Symposium (IMS 2015)., 15325840, IEEE, pp. 1-4, IEEE MTT-S International Microwave Symposium (IMS 2015), Phoenix, United States, 17/05/15. https://doi.org/10.1109/MWSYM.2015.7167029

TY - GEN

T1 - Large-Signal Modeling of On-Wafer Microwave Transistors based on Response Surface Methodology

AU - Barmuta, Pawe

AU - Avolio, Gustavo

AU - Ferranti, Francesco

AU - Lewandowski, Arkadiusz

AU - Schreurs, Dominique

PY - 2015/5/17

Y1 - 2015/5/17

N2 - In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.

AB - In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.

KW - active device modeling

KW - experimental design

KW - response surface

U2 - 10.1109/MWSYM.2015.7167029

DO - 10.1109/MWSYM.2015.7167029

M3 - Conference paper

SP - 1

EP - 4

BT - IEEE MTT-S International Microwave Symposium (IMS 2015)

PB - IEEE

T2 - IEEE MTT-S International Microwave Symposium (IMS 2015)

Y2 - 17 May 2015 through 22 May 2015

ER -

Large-Signal Modeling of On-Wafer Microwave Transistors based on Response Surface Methodology

Abstract

Conference

Keywords

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