Linearity Assessment of GaN HEMTs on Si using Nonlinear Characterisation

Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Vamsi Putcha, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais

Research output: Chapter in Book/Report/Conference proceedingConference paper

1 Citation (Scopus)


We investigate the effect of varying the gate-to-drain spacing and the gate field-plate on the device linearity of GaN HEMTs on Si for 0.11μm, 0.15μm, and 0.19μm gate lengths. The gain compression, phase distortion, and harmonic distortion metrics are measured using a nonlinear characterisation setup calibrated at 6GHz up to the third harmonic. The acquired nonlinearity metrics are correlated with the extrinsic device parasitics extracted from S-parameter measurements. We observe that excessive gate field-plate length scaling down to 0.05μm lowers the total phase distortion at the expense of gain linearity and harmonic distortion in Class AB while minimising the gate-to-drain spacing alleviates the harmonic distortion only for devices of 0.19μm gate length. Further evaluation, under matched conditions, using a passive load-pull measurement setup points to a decline in the peak achievable PAE and PSAT at gate field-plates smaller than 0.12μm.
Original languageEnglish
Title of host publication2021 16th European Microwave Integrated Circuits Conference (EuMIC)
Number of pages4
ISBN (Electronic)978-2-87487-064-4
ISBN (Print)978-1-6654-4722-5
Publication statusPublished - 3 Apr 2022
EventEuropean Microwave Week: United in Microwaves - ExCEL London, London, United Kingdom
Duration: 2 Apr 20227 Apr 2022
Conference number: 51

Publication series

NameEuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference


ConferenceEuropean Microwave Week
Abbreviated titleEuMW
Country/TerritoryUnited Kingdom
Internet address


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