Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability

Hao Yu; Rana ElKashlan; Meng-Che Tsai; Yi Yang; Mamoun Guenach; Ying-Chun Kuo; Sachin Yadav; Barry O Sullivan; Aarti Rathi; Amratansh Gupta; Dongping Xiao; Claude Desset; AliReza Alian; Uthayasankaran Peralagu; Valeri Afanasiev; Tian-Li Wu; Bertrand Parvais; Nadine Collaert

doi:10.1109/IRPS48204.2025.10983812

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability

Hao Yu, Rana ElKashlan, Meng-Che Tsai, Yi Yang, Mamoun Guenach, Ying-Chun Kuo, Sachin Yadav, Barry O Sullivan, Aarti Rathi, Amratansh Gupta, Dongping Xiao, Claude Desset, AliReza Alian, Uthayasankaran Peralagu, Valeri Afanasiev, Tian-Li Wu, Bertrand Parvais, Nadine Collaert

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

1 Citation (Scopus)

Abstract

In this work, we discuss whether a positive gate bias instability (Δ V _th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V _th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V _th issue.

Original language	English
Title of host publication	2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings
Place of Publication	Monterey, CA, USA
Publisher	IEEE International Reliability Physics Symposium (IRPS) 2025
Pages	11C.1-1-11C.1-6
Number of pages	6
Edition	2025
ISBN (Electronic)	979-8-3315-0477-9
ISBN (Print)	979-8-3315-0478-6
DOIs	https://doi.org/10.1109/IRPS48204.2025.10983812
Publication status	Published - May 2025

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Bibliographical note

Publisher Copyright:
© 2025 IEEE.

Keywords

Gate Reliability
GaN MISHEMT
MISHEMT
gallium nitride (GaN)
Power Amplifier (PA)
2DEG
Threshold Voltage Instability
MODFETs
QAM
OFDM
MOCVD
5G
PAPR

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Yu, H., ElKashlan, R., Tsai, M.-C., Yang, Y., Guenach, M., Kuo, Y.-C., Yadav, S., Sullivan, B. O., Rathi, A., Gupta, A., Xiao, D., Desset, C., Alian, A., Peralagu, U., Afanasiev, V., Wu, T.-L., Parvais, B., & Collaert, N. (2025). Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. In 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings (2025 ed., pp. 11C.1-1-11C.1-6). (IEEE International Reliability Physics Symposium Proceedings). IEEE International Reliability Physics Symposium (IRPS) 2025. https://doi.org/10.1109/IRPS48204.2025.10983812

Yu, Hao ; ElKashlan, Rana ; Tsai, Meng-Che et al. / Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025. ed. Monterey, CA, USA : IEEE International Reliability Physics Symposium (IRPS) 2025, 2025. pp. 11C.1-1-11C.1-6 (IEEE International Reliability Physics Symposium Proceedings).

@inproceedings{d6e36f86d8d54866aec4c0b2246df4b1,

title = "Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability",

abstract = "In this work, we discuss whether a positive gate bias instability (Δ V th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V th issue.",

keywords = "Gate Reliability, GaN MISHEMT, MISHEMT, gallium nitride (GaN), Power Amplifier (PA), 2DEG, Threshold Voltage Instability, MODFETs, QAM, OFDM, MOCVD, 5G, PAPR",

author = "Hao Yu and Rana ElKashlan and Meng-Che Tsai and Yi Yang and Mamoun Guenach and Ying-Chun Kuo and Sachin Yadav and Sullivan, {Barry O} and Aarti Rathi and Amratansh Gupta and Dongping Xiao and Claude Desset and AliReza Alian and Uthayasankaran Peralagu and Valeri Afanasiev and Tian-Li Wu and Bertrand Parvais and Nadine Collaert",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.",

year = "2025",

month = may,

doi = "10.1109/IRPS48204.2025.10983812",

language = "English",

isbn = "979-8-3315-0478-6",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "IEEE International Reliability Physics Symposium (IRPS) 2025",

pages = "11C.1--1--11C.1--6",

booktitle = "2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings",

edition = "2025",

}

Yu, H, ElKashlan, R, Tsai, M-C, Yang, Y, Guenach, M, Kuo, Y-C, Yadav, S, Sullivan, BO, Rathi, A, Gupta, A, Xiao, D, Desset, C, Alian, A, Peralagu, U, Afanasiev, V, Wu, T-L, Parvais, B & Collaert, N 2025, Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. in 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE International Reliability Physics Symposium (IRPS) 2025, Monterey, CA, USA, pp. 11C.1-1-11C.1-6. https://doi.org/10.1109/IRPS48204.2025.10983812

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. / Yu, Hao; ElKashlan, Rana; Tsai, Meng-Che et al.
2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025. ed. Monterey, CA, USA: IEEE International Reliability Physics Symposium (IRPS) 2025, 2025. p. 11C.1-1-11C.1-6 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

TY - GEN

T1 - Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability

AU - Yu, Hao

AU - ElKashlan, Rana

AU - Tsai, Meng-Che

AU - Yang, Yi

AU - Guenach, Mamoun

AU - Kuo, Ying-Chun

AU - Yadav, Sachin

AU - Sullivan, Barry O

AU - Rathi, Aarti

AU - Gupta, Amratansh

AU - Xiao, Dongping

AU - Desset, Claude

AU - Alian, AliReza

AU - Peralagu, Uthayasankaran

AU - Afanasiev, Valeri

AU - Wu, Tian-Li

AU - Parvais, Bertrand

AU - Collaert, Nadine

PY - 2025/5

Y1 - 2025/5

N2 - In this work, we discuss whether a positive gate bias instability (Δ V th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V th issue.

AB - In this work, we discuss whether a positive gate bias instability (Δ V th) issue hampers a GaN MISHEMT in power amplifier (PA) applications. Two aspects are evaluated: (1) the safe gate modulation range of a GaN MISHEMT that is free of Δ V th, and (2) the gate modulation range of a PA in linear operation. The analysis shows that the two ranges have a significant overlap, meaning that a linearly operating MISHEMT PA can be well designed to avoid the positive Δ V th issue.

KW - Gate Reliability

KW - GaN MISHEMT

KW - MISHEMT

KW - gallium nitride (GaN)

KW - Power Amplifier (PA)

KW - 2DEG

KW - Threshold Voltage Instability

KW - MODFETs

KW - QAM

KW - OFDM

KW - MOCVD

KW - 5G

KW - PAPR

UR - http://www.scopus.com/inward/record.url?scp=105005824968&partnerID=8YFLogxK

U2 - 10.1109/IRPS48204.2025.10983812

DO - 10.1109/IRPS48204.2025.10983812

M3 - Conference paper

SN - 979-8-3315-0478-6

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 11C.1-1-11C.1-6

BT - 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings

PB - IEEE International Reliability Physics Symposium (IRPS) 2025

CY - Monterey, CA, USA

ER -

Yu H, ElKashlan R, Tsai MC, Yang Y, Guenach M, Kuo YC et al. Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. In 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025 ed. Monterey, CA, USA: IEEE International Reliability Physics Symposium (IRPS) 2025. 2025. p. 11C.1-1-11C.1-6. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS48204.2025.10983812

Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability

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