Planar bulk MOSFETs versus FinFETs: an analog/RF perspective

V. Subramanian, Bertrand Parvais, Jonathan Borremans, A. Mercha, Dimitri Linten, Piet Wambacq, Josine Loo, M. Dehan, Cedric Gustin, Nadine Collaert, S Kubicek, R. J. P. Lander, J.c. Hooker, F. N. Cubaynes, S. Donnay, M. Jurczak, G. Groeseneken, Willy Sansen, S. Decoutere

Research output: Contribution to journalArticlepeer-review

127 Citations (Scopus)


Comparison of digital and analog figures-of-merit of
FinFETs and planar bulk MOSFETs reveals an interesting tradeoff
in the analog/RF design space. It is found that FinFETs possess
the following key advantages over bulk MOSFETs: reduced leakage,
excellent subthreshold slope, and better voltage gain without
degradation of noise or linearity. This makes them attractive for
digital and low-frequency RF applications around 5 GHz, where
the performance-power tradeoff is important. On the other hand,
in high-frequency applications, planar bulk MOSFETs are seen
to hold the advantage over FinFETs due to their higher peak
transconductance. However, this comes at a cost of a reduced
voltage gain of bulk MOSFETs.
Original languageEnglish
Pages (from-to)3071-3079
Number of pages9
JournalIEEE Transactions on Electron Devices
Issue number12
Publication statusPublished - 1 Dec 2006


  • cmos
  • scaling
  • finfet


Dive into the research topics of 'Planar bulk MOSFETs versus FinFETs: an analog/RF perspective'. Together they form a unique fingerprint.

Cite this