Planar bulk MOSFETs versus FinFETs: an analog/RF perspective

V. Subramanian; Bertrand Parvais; Jonathan Borremans; A. Mercha; Dimitri Linten; Piet Wambacq; Josine Loo; M. Dehan; Cedric Gustin; Nadine Collaert; S Kubicek; R. J. P. Lander; J.c. Hooker; F. N. Cubaynes; S. Donnay; M. Jurczak; G. Groeseneken; Willy Sansen; S. Decoutere

Planar bulk MOSFETs versus FinFETs: an analog/RF perspective

V. Subramanian, Bertrand Parvais, Jonathan Borremans, A. Mercha, Dimitri Linten, Piet Wambacq, Josine Loo, M. Dehan, Cedric Gustin, Nadine Collaert, S Kubicek, R. J. P. Lander, J.c. Hooker, F. N. Cubaynes, S. Donnay, M. Jurczak, G. Groeseneken, Willy Sansen, S. Decoutere

Electronics and Informatics

Research output: Contribution to journal › Article › peer-review

127 Citations (Scopus)

Abstract

Comparison of digital and analog figures-of-merit of
FinFETs and planar bulk MOSFETs reveals an interesting tradeoff
in the analog/RF design space. It is found that FinFETs possess
the following key advantages over bulk MOSFETs: reduced leakage,
excellent subthreshold slope, and better voltage gain without
degradation of noise or linearity. This makes them attractive for
digital and low-frequency RF applications around 5 GHz, where
the performance-power tradeoff is important. On the other hand,
in high-frequency applications, planar bulk MOSFETs are seen
to hold the advantage over FinFETs due to their higher peak
transconductance. However, this comes at a cost of a reduced
voltage gain of bulk MOSFETs.

Original language	English
Pages (from-to)	3071-3079
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	12
Publication status	Published - 1 Dec 2006

Keywords

cmos
scaling
finfet

Cite this

Subramanian, V., Parvais, B., Borremans, J., Mercha, A., Linten, D., Wambacq, P., Loo, J., Dehan, M., Gustin, C., Collaert, N., Kubicek, S., Lander, R. J. P., Hooker, J. C., Cubaynes, F. N., Donnay, S., Jurczak, M., Groeseneken, G., Sansen, W., & Decoutere, S. (2006). Planar bulk MOSFETs versus FinFETs: an analog/RF perspective. IEEE Transactions on Electron Devices, 53(12), 3071-3079.

Subramanian, V. ; Parvais, Bertrand ; Borremans, Jonathan ; Mercha, A. ; Linten, Dimitri ; Wambacq, Piet ; Loo, Josine ; Dehan, M. ; Gustin, Cedric ; Collaert, Nadine ; Kubicek, S ; Lander, R. J. P. ; Hooker, J.c. ; Cubaynes, F. N. ; Donnay, S. ; Jurczak, M. ; Groeseneken, G. ; Sansen, Willy ; Decoutere, S. / Planar bulk MOSFETs versus FinFETs: an analog/RF perspective. In: IEEE Transactions on Electron Devices. 2006 ; Vol. 53, No. 12. pp. 3071-3079.

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abstract = "Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage, excellent subthreshold slope, and better voltage gain without degradation of noise or linearity. This makes them attractive for digital and low-frequency RF applications around 5 GHz, where the performance-power tradeoff is important. On the other hand, in high-frequency applications, planar bulk MOSFETs are seen to hold the advantage over FinFETs due to their higher peak transconductance. However, this comes at a cost of a reduced voltage gain of bulk MOSFETs.",

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author = "V. Subramanian and Bertrand Parvais and Jonathan Borremans and A. Mercha and Dimitri Linten and Piet Wambacq and Josine Loo and M. Dehan and Cedric Gustin and Nadine Collaert and S Kubicek and Lander, {R. J. P.} and J.c. Hooker and Cubaynes, {F. N.} and S. Donnay and M. Jurczak and G. Groeseneken and Willy Sansen and S. Decoutere",

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Subramanian, V, Parvais, B, Borremans, J, Mercha, A, Linten, D, Wambacq, P, Loo, J, Dehan, M, Gustin, C, Collaert, N, Kubicek, S, Lander, RJP, Hooker, JC, Cubaynes, FN, Donnay, S, Jurczak, M, Groeseneken, G, Sansen, W & Decoutere, S 2006, 'Planar bulk MOSFETs versus FinFETs: an analog/RF perspective', IEEE Transactions on Electron Devices, vol. 53, no. 12, pp. 3071-3079.

Planar bulk MOSFETs versus FinFETs: an analog/RF perspective. / Subramanian, V.; Parvais, Bertrand; Borremans, Jonathan; Mercha, A.; Linten, Dimitri; Wambacq, Piet; Loo, Josine; Dehan, M.; Gustin, Cedric; Collaert, Nadine; Kubicek, S; Lander, R. J. P.; Hooker, J.c.; Cubaynes, F. N.; Donnay, S.; Jurczak, M.; Groeseneken, G.; Sansen, Willy; Decoutere, S.

In: IEEE Transactions on Electron Devices, Vol. 53, No. 12, 01.12.2006, p. 3071-3079.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Planar bulk MOSFETs versus FinFETs: an analog/RF perspective

AU - Subramanian, V.

AU - Parvais, Bertrand

AU - Borremans, Jonathan

AU - Mercha, A.

AU - Linten, Dimitri

AU - Wambacq, Piet

AU - Loo, Josine

AU - Dehan, M.

AU - Gustin, Cedric

AU - Collaert, Nadine

AU - Kubicek, S

AU - Lander, R. J. P.

AU - Hooker, J.c.

AU - Cubaynes, F. N.

AU - Donnay, S.

AU - Jurczak, M.

AU - Groeseneken, G.

AU - Sansen, Willy

AU - Decoutere, S.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage, excellent subthreshold slope, and better voltage gain without degradation of noise or linearity. This makes them attractive for digital and low-frequency RF applications around 5 GHz, where the performance-power tradeoff is important. On the other hand, in high-frequency applications, planar bulk MOSFETs are seen to hold the advantage over FinFETs due to their higher peak transconductance. However, this comes at a cost of a reduced voltage gain of bulk MOSFETs.

AB - Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage, excellent subthreshold slope, and better voltage gain without degradation of noise or linearity. This makes them attractive for digital and low-frequency RF applications around 5 GHz, where the performance-power tradeoff is important. On the other hand, in high-frequency applications, planar bulk MOSFETs are seen to hold the advantage over FinFETs due to their higher peak transconductance. However, this comes at a cost of a reduced voltage gain of bulk MOSFETs.

KW - cmos

KW - scaling

KW - finfet

M3 - Article

VL - 53

SP - 3071

EP - 3079

JO - IEEE Trans. Elec. Devs.

JF - IEEE Trans. Elec. Devs.

SN - 0018-9383

IS - 12

ER -

Planar bulk MOSFETs versus FinFETs: an analog/RF perspective

Abstract

Keywords

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