Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

G. Rzepa, M. Karner, O. Baumgartner, G. Strof, F. Schanovsky, F. Mitterbauer, C. Kernstock, H. W. Karner, P. Weckx, G. Hellings, D. Claes, Z. Wu, Y. Xiang, T. Chiarella, B. Parvais, J. Mitard, J. Franco, B. Kaczer, D. Linten, Z. Stanojevic

Research output: Chapter in Book/Report/Conference proceedingConference paper

1 Citation (Scopus)

Abstract

Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE-utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator Comphy for reliability. Good agreement with experimental RO performance of iN14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made.

Original languageEnglish
Title of host publication2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728168937
DOIs
Publication statusPublished - Mar 2021
Event2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Virtual, Monterey, United States
Duration: 21 Mar 202124 Mar 2021

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2021-March
ISSN (Print)1541-7026

Conference

Conference2021 IEEE International Reliability Physics Symposium, IRPS 2021
CountryUnited States
CityVirtual, Monterey
Period21/03/2124/03/21

Keywords

  • bias temperature instabilities
  • high-k dielectric materials
  • nanosheets
  • semiconductor device modeling
  • semiconductor device reliability

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