Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses

Yi Yang; Hao Yu; Meng-Che Tsai; Wei-Tung Lin; Ying-Chun Kuo; Barry O Sullivan; Aarti Rathi; Amratansh Gupta; Sachin Yadav; AliReza Alian; Uthayasankaran Peralagu; Bertrand Parvais; Nadine Collaert; Tian-Li Wu

doi:10.1109/IRPS48204.2025.10983187

Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses

Yi Yang, Hao Yu, Meng-Che Tsai, Wei-Tung Lin, Ying-Chun Kuo, Barry O Sullivan, Aarti Rathi, Amratansh Gupta, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian-Li Wu

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

Abstract

This study examines the stability of RF MISHEMTs under ON, SEMI-ON, and OFF-state pulses with insitu SiN thicknesses scaled from 10nm to 1nm, compared to
RF Schottky HEMTs. While stability is maintained under ON state pulses, significant degradation is observed under SEMION and OFF-state pulses, particularly in devices with a 1 nm in-situ SiN layer (M1). The high interface trap density (Nit) and inadequate passivation of the M1 sample contribute to the observed current degradation. EDX analysis suggests a rough interface in M1, likely due to non-uniform SiN growth or SiN/Al2O3 intermixing.

Original language	English
Title of host publication	2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings
Place of Publication	Monterey, CA, USA
Publisher	IEEE International Reliability Physics Symposium (IRPS) 2025
Pages	P73.RF-1-P73.RF-5
Number of pages	5
Edition	2025
ISBN (Electronic)	9798331504779
ISBN (Print)	1541-7026
DOIs	https://doi.org/10.1109/IRPS48204.2025.10983187
Publication status	Published - May 2025

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Bibliographical note

Publisher Copyright:
© 2025 IEEE.

Keywords

GaN-on-Si
in-situ SiN
MISHEMT

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10.1109/IRPS48204.2025.10983187

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Yang, Y., Yu, H., Tsai, M.-C., Lin, W.-T., Kuo, Y.-C., Sullivan, B. O., Rathi, A., Gupta, A., Yadav, S., Alian, A., Peralagu, U., Parvais, B., Collaert, N., & Wu, T.-L. (2025). Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. In 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings (2025 ed., pp. P73.RF-1-P73.RF-5). (IEEE International Reliability Physics Symposium Proceedings). IEEE International Reliability Physics Symposium (IRPS) 2025. https://doi.org/10.1109/IRPS48204.2025.10983187

Yang, Yi ; Yu, Hao ; Tsai, Meng-Che et al. / Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025. ed. Monterey, CA, USA : IEEE International Reliability Physics Symposium (IRPS) 2025, 2025. pp. P73.RF-1-P73.RF-5 (IEEE International Reliability Physics Symposium Proceedings).

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title = "Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses",

abstract = "This study examines the stability of RF MISHEMTs under ON, SEMI-ON, and OFF-state pulses with insitu SiN thicknesses scaled from 10nm to 1nm, compared toRF Schottky HEMTs. While stability is maintained under ON state pulses, significant degradation is observed under SEMION and OFF-state pulses, particularly in devices with a 1 nm in-situ SiN layer (M1). The high interface trap density (Nit) and inadequate passivation of the M1 sample contribute to the observed current degradation. EDX analysis suggests a rough interface in M1, likely due to non-uniform SiN growth or SiN/Al2O3 intermixing.",

keywords = "GaN-on-Si, in-situ SiN, MISHEMT",

author = "Yi Yang and Hao Yu and Meng-Che Tsai and Wei-Tung Lin and Ying-Chun Kuo and Sullivan, {Barry O} and Aarti Rathi and Amratansh Gupta and Sachin Yadav and AliReza Alian and Uthayasankaran Peralagu and Bertrand Parvais and Nadine Collaert and Tian-Li Wu",

note = "Publisher Copyright: {\textcopyright} 2025 IEEE.",

year = "2025",

month = may,

doi = "10.1109/IRPS48204.2025.10983187",

language = "English",

isbn = "1541-7026",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "IEEE International Reliability Physics Symposium (IRPS) 2025",

pages = "P73.RF--1--P73.RF--5",

booktitle = "2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings",

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Yang, Y, Yu, H, Tsai, M-C, Lin, W-T, Kuo, Y-C, Sullivan, BO, Rathi, A, Gupta, A, Yadav, S, Alian, A, Peralagu, U, Parvais, B , Collaert, N & Wu, T-L 2025, Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. in 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025 edn, IEEE International Reliability Physics Symposium Proceedings, IEEE International Reliability Physics Symposium (IRPS) 2025, Monterey, CA, USA, pp. P73.RF-1-P73.RF-5. https://doi.org/10.1109/IRPS48204.2025.10983187

Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. / Yang, Yi; Yu, Hao; Tsai, Meng-Che et al.
2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025. ed. Monterey, CA, USA: IEEE International Reliability Physics Symposium (IRPS) 2025, 2025. p. P73.RF-1-P73.RF-5 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference paper

TY - GEN

T1 - Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses

AU - Yang, Yi

AU - Yu, Hao

AU - Tsai, Meng-Che

AU - Lin, Wei-Tung

AU - Kuo, Ying-Chun

AU - Sullivan, Barry O

AU - Rathi, Aarti

AU - Gupta, Amratansh

AU - Yadav, Sachin

AU - Alian, AliReza

AU - Peralagu, Uthayasankaran

AU - Parvais, Bertrand

AU - Collaert, Nadine

AU - Wu, Tian-Li

PY - 2025/5

Y1 - 2025/5

N2 - This study examines the stability of RF MISHEMTs under ON, SEMI-ON, and OFF-state pulses with insitu SiN thicknesses scaled from 10nm to 1nm, compared toRF Schottky HEMTs. While stability is maintained under ON state pulses, significant degradation is observed under SEMION and OFF-state pulses, particularly in devices with a 1 nm in-situ SiN layer (M1). The high interface trap density (Nit) and inadequate passivation of the M1 sample contribute to the observed current degradation. EDX analysis suggests a rough interface in M1, likely due to non-uniform SiN growth or SiN/Al2O3 intermixing.

AB - This study examines the stability of RF MISHEMTs under ON, SEMI-ON, and OFF-state pulses with insitu SiN thicknesses scaled from 10nm to 1nm, compared toRF Schottky HEMTs. While stability is maintained under ON state pulses, significant degradation is observed under SEMION and OFF-state pulses, particularly in devices with a 1 nm in-situ SiN layer (M1). The high interface trap density (Nit) and inadequate passivation of the M1 sample contribute to the observed current degradation. EDX analysis suggests a rough interface in M1, likely due to non-uniform SiN growth or SiN/Al2O3 intermixing.

KW - GaN-on-Si

KW - in-situ SiN

KW - MISHEMT

UR - http://www.scopus.com/inward/record.url?scp=105005834282&partnerID=8YFLogxK

U2 - 10.1109/IRPS48204.2025.10983187

DO - 10.1109/IRPS48204.2025.10983187

M3 - Conference paper

SN - 1541-7026

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - P73.RF-1-P73.RF-5

BT - 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings

PB - IEEE International Reliability Physics Symposium (IRPS) 2025

CY - Monterey, CA, USA

ER -

Yang Y, Yu H, Tsai MC, Lin WT, Kuo YC, Sullivan BO et al. Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. In 2025 IEEE International Reliability Physics Symposium, IRPS 2025 - Proceedings. 2025 ed. Monterey, CA, USA: IEEE International Reliability Physics Symposium (IRPS) 2025. 2025. p. P73.RF-1-P73.RF-5. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS48204.2025.10983187

Toward Understanding Stability of RF MIS-HEMTs under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses

Abstract

Publication series

Bibliographical note

Keywords

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