X-valley influence on hot frre electron absorption and nonlinearities at 10.6 micron in highly doped GaAs

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Eur. Phys. J.- Appl. Phys., Vol. 19, Nr. 1, pp. 29 - 38.

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@article{dfe6bd73688645c9b705c5458eca77b2,

title = "X-valley influence on hot frre electron absorption and nonlinearities at 10.6 micron in highly doped GaAs",

author = "Gennady Shkerdin and Johan Stiens and Roger Vounckx",

note = "Eur. Phys. J.- Appl. Phys., Vol. 19, Nr. 1, pp. 29 - 38.",

year = "2002",

language = "English",

pages = "38",

journal = "Eur. Phys. J.- Appl. Phys.",

issn = "1286-0050",

publisher = "EDP Sciences",

number = "1",

}

TY - JOUR

T1 - X-valley influence on hot frre electron absorption and nonlinearities at 10.6 micron in highly doped GaAs

AU - Shkerdin, Gennady

AU - Stiens, Johan

AU - Vounckx, Roger

N1 - Eur. Phys. J.- Appl. Phys., Vol. 19, Nr. 1, pp. 29 - 38.

PY - 2002

Y1 - 2002

M3 - Article

SN - 1286-0050

SP - 38

JO - Eur. Phys. J.- Appl. Phys.

JF - Eur. Phys. J.- Appl. Phys.

IS - 1

ER -