A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications

Dongyang Yan, yang zhang, Dries Peumans, Mark Ingels, Piet Wambacq

Onderzoeksoutput: Conference paper

1 Citaat (Scopus)

Samenvatting

In this paper, a two-stage Ka-band power amplifier (PA) utilizing a sub-quarter-wavelength (SQWL) balun is presented for efficient and compact series power combining. The differential two-stage PA includes a high-order interstage matching network to suppress AM-PM distortion without the addition of additional active devices. The PA is fabricated using a 150nm GaN technology and produces over 32 dB m output power across a frequency range of 26–30 GHz. The differential pair plus SQWL balun occupies a small area of only 0.4mm 2 , resulting in a high power density of 5.725 W/mm 2 • The presented PA is among the highest in power & efficiency achieved with a differential-end PA at Ka-band frequency range in G a N technologies.
Originele taal-2English
Titel2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023
UitgeverijIEEE
Pagina's70-73
Aantal pagina's4
ISBN van elektronische versie979-8-3503-0764-1
ISBN van geprinte versie979-8-3503-0765-8
DOI's
StatusPublished - okt 2023
Evenement2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - Marriott Monterey , Monterey, United States
Duur: 16 okt 202318 okt 2023
https://bcicts.org/

Publicatie series

Naam2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023

Conference

Conference2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Verkorte titelBCICTS 2023
Land/RegioUnited States
StadMonterey
Periode16/10/2318/10/23
Internet adres

Bibliografische nota

Publisher Copyright:
© 2023 IEEE.

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