A 6.5-kV ESD-Protected 3-5-GHz Ultra-Wideband BiCMOS Low-Noise Amplifier Using Interstage Gain Roll-Off Compensation

Mingxu Liu, Jan Craninckx, Mahadeva Iyer Natarajan, Maarten Kuijk, Alain Barel

Onderzoeksoutput: Articlepeer review

22 Citaten (Scopus)

Samenvatting

Design and validation of an electrostatic discharge (ESD)-protected ultra-wideband low-noise amplifier (LNA) is presented in this paper. It features an interstage matching network for gain roll-off compensation to achieve a flat gain over its passband. Evaluated with a chip-on-board approach, the amplifier demonstrates a gain of 11.8 ± 0.3 dB, minimum noise figure of 2.1 dB, and a group delay variation of ±30 ps from 3 to 5 GHz, even though it uses a less advanced 0.35- micron BiCMOS technology. The LNA is protected against human body model ESD stress up to 6.5 kV. The measured input third-order intercept point at 4.5 GHz is -5.5 dBm. The core LNA draws 3 mA from a 3-V supply
Originele taal-2English
Pagina's (van-tot)1698-1706
Aantal pagina's9
TijdschriftIEEE Transactions on Microwave Theory and Techniques
Volume54
Nummer van het tijdschrift4
StatusPublished - 1 apr 2006

Bibliografische nota

IEEE Transactions on Microwave Theory and Techniques, Vol. 54, No. 4, April 2006, pp. 1698-1706

Vingerafdruk

Duik in de onderzoeksthema's van 'A 6.5-kV ESD-Protected 3-5-GHz Ultra-Wideband BiCMOS Low-Noise Amplifier Using Interstage Gain Roll-Off Compensation'. Samen vormen ze een unieke vingerafdruk.

Citeer dit