A 6.5-kV ESD protected 3-5-GHz ultra-wideband BiCMOS low noise amplifier using interstage gain roll-off compensation

Mingxu Liu, J. Craninckx, N.m. Iyer, Maarten Kuijk, Alain Barel

Onderzoeksoutput: Conference paper

6 Citaten (Scopus)

Samenvatting

Design and validation of an ESD protected ultra-wideband low noise amplifier is presented in this paper. It features an interstage matching network for gain roll-off compensation to achieve a flat gain over its passband. Evaluated with a chip-on-board approach, the amplifier demonstrates a gain of 11.8 ± 0.3 dB, minimum noise figure (NF) of 2.1 dB, and a group delay variation of ±30 ps from 3 to 5 GHz, even though using a less advanced 0.35-micron BiCMOS technology. Its input, output and power supply are all protected against HBM ESD stress up to 6.5 kV. Measured IIP3 at 4.5 GHz is -5.5 dBm. The core LNA draws 3 mA from a 3-V supply
Originele taal-2English
Titel2005 IEEE International Conference on Ultra-Wideband
UitgeverijIEEE
Pagina's525-529
Aantal pagina's5
ISBN van geprinte versie0-7803-9397-X
StatusPublished - 5 sep 2005
EvenementUnknown - Stockholm, Sweden
Duur: 21 sep 200925 sep 2009

Conference

ConferenceUnknown
Land/RegioSweden
StadStockholm
Periode21/09/0925/09/09

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