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The assessment of Power Electronics Converters (PECs) reliability is a crucial research area for the development of robust PECs. The key parameter for reliability assessment is the real-time junction temperature (T j ) profile for semiconductor power switches of PECs. While complex high-fidelity simulation models with electro-thermal models can accurately predict T j during the offline design phase, their computational requirements make them impractical for real-time applications. This paper proposes a methodology to develop a real-time hardware deployable model for estimating the junction temperature of an Insulated Gate Bipolar Transistor (IGBT) power device. A data-driven reduced-order model (ROM) of an industrial inverter setup based on a high-fidelity Multiphysics simulation model is presented in the article. This work also contributes to the realization of virtual sensors and digital twins for PECs.
Originele taal-2English
Titel2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Plaats van productieAalborg, Denmark
UitgeverijIEEE Explore
Pagina's1-8
Aantal pagina's8
ISBN van elektronische versie978-9-0758-1541-2
ISBN van geprinte versie979-8-3503-1678-0
DOI's
StatusPublished - 2 okt 2023
EvenementEPE 2023 ECCE Europe - Aalborg, Denmark
Duur: 4 sep 20238 sep 2023

Publicatie series

Naam2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe

Conference

ConferenceEPE 2023 ECCE Europe
Land/RegioDenmark
StadAalborg
Periode4/09/238/09/23

Bibliografische nota

Publisher Copyright:
© 2023 EPE Association.

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