Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

Gobinath Jegannathan

doi:10.1117/12.2608691

Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

Gobinath Jegannathan

Elektronica en Informatica

Onderzoeksoutput: Conference paper

1 Citaat (Scopus)

Samenvatting

The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 % at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.

Originele taal-2	English
Titel	Silicon Photonics
Redacteuren	Graham T. Reed, Andrew P. Knights
Plaats van productie	San Francisco
Pagina's	-
Aantal pagina's	8
Volume	12006
Uitgave	XVII
ISBN van elektronische versie	9781510648838
DOI's	https://doi.org/10.1117/12.2608691
Status	Published - 5 mrt. 2022

Publicatie series

Naam	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12006
ISSN van geprinte versie	0277-786X
ISSN van elektronische versie	1996-756X

Keywords

Geiger
CMOS
SPAD
Current-Assistance
drift field
NIR

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Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths
Jegannathan, G. (Speaker)
22 jan. 2022 → 27 jan. 2022
Activiteit: Talk or presentation at a conference

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title = "Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths",

abstract = "The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 \% at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.",

keywords = "Geiger, CMOS, SPAD, Current-Assistance, drift field, NIR",

author = "Gobinath Jegannathan",

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N2 - The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 % at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.

AB - The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 % at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.

KW - Geiger

KW - CMOS

KW - SPAD

KW - Current-Assistance

KW - drift field

KW - NIR

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DO - 10.1117/12.2608691

M3 - Conference paper

SN - 978-1-5106-4883-8

VL - 12006

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - -

BT - Silicon Photonics

A2 - Reed, Graham T.

A2 - Knights, Andrew P.

CY - San Francisco

ER -

Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

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Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

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