Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

Hao Yu, B. Parvais, U. Peralagu, R. Y. Elkashlan, R. Rodriguez, A. Khaled, S. Yadav, A. Alian, M. Zhao, N. De Almeida Braga, J. Cobb, J. Fang, P. Cardinael, A. Sibaja-Hernandez, Nadine Collaert

Onderzoeksoutput: Conference paperResearch

1 Citaat (Scopus)

Samenvatting

Trapping in an impurity (e.g. Fe, C) doped back barrier (BB) causes pronounced on-resistance (Ron) dispersion of GaN HEMTs. We demonstrate that the BB trapping is alleviated by increasing 2DEG density Nsh in the GaN channel (50% increased Nsh results in 30% less Delta mathrm{R} -{on}) and inserting an additional intrinsic AlGaN BB (100 nm AlGaN with 50% less Delta mathrm{R} -{on}). We propose a novel flat-AlGaN-BB-energy-band designing criterion for the AlGaN/C-GaN BB combination.

Originele taal-2English
Titel2022 International Electron Devices Meeting, IEDM 2022
UitgeverijInstitute of Electrical and Electronics Engineers Inc.
Pagina's3061-3064
Aantal pagina's4
ISBN van elektronische versie9781665489591
DOI's
StatusPublished - 2022
Evenement2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duur: 3 dec 20227 dec 2022

Publicatie series

Naam2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
ISSN van geprinte versie2380-9248

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Land/RegioUnited States
StadSan Francisco
Periode3/12/227/12/22

Bibliografische nota

Publisher Copyright:
© 2022 IEEE.

Copyright:
Copyright 2023 Elsevier B.V., All rights reserved.

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