Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier

Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais

Onderzoeksoutput: Conference paperResearch

2 Citaten (Scopus)


We examine the influence of scaling the GaN channel thickness from 100nm to 35nm on the RF performance for GaN HEMTs on Si with a cGaN back-barrier with gate lengths ranging from 70nm to 190nm. Thinner GaN channels notably improve the short channel effects. However, there is a degradation in the on-state performance associated with an increase in dispersion. These trade-offs translate to a ~33%, ~20% decline in fT,fMAX respectively, for 70nm devices. While the large-signal metrics, PSAT and PAE, at 6GHz drop by ~46% and ~18%, respectively. We also consider the lateral downscaling of the gate-to-drain and gate-to-source spacings, which proves beneficial in boosting PSAT, up to 3.4W/mm, by increasing the extrinsic transconductance by ~20%.
Originele taal-2English
Titel2022 IEEE/MTT-S International Microwave Symposium - IMS 2022
Plaats van productieDenver, CO, USA
UitgeverijInstitute of Electrical and Electronics Engineers Inc.
Aantal pagina's4
ISBN van elektronische versie978-1-6654-9613-1
ISBN van geprinte versie978-1-6654-9614-8
StatusPublished - 29 aug 2022
EvenementMicrowave, MTT-S International Symposium: 2022 IEEE/MTT-S International Microwave Symposium - Denver, CO, Denver, United States
Duur: 19 jun 202224 jun 2022


ConferenceMicrowave, MTT-S International Symposium
Verkorte titelIMS 2022
Land/RegioUnited States


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