CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

U. Peralagu; B. De Jaeger; D. M. Fleetwood; P. Wambacq; M. Zhao; B. Parvais; N. Waldron; N. Collaert; A. Alian; V. Putcha; A. Khaled; R. Rodriguez; A. Sibaja-Hernandez; S. Chang; E. Simoen; S. E. Zhao

doi:10.1109/IEDM19573.2019.8993582

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

U. Peralagu, B. De Jaeger, D. M. Fleetwood, P. Wambacq, M. Zhao, B. Parvais, N. Waldron, N. Collaert, A. Alian, V. Putcha, A. Khaled, R. Rodriguez, A. Sibaja-Hernandez, S. Chang, E. Simoen, S. E. Zhao

Onderzoeksoutput: Conference paper

35 Citaten (Scopus)

Samenvatting

We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (R_C) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (V_BD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μ_FE), >2000 cm²/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

Originele taal-2	English
Titel	Proceedings of the 2019 IEEE International Electron Devices Meeting
Uitgeverij	Institute of Electrical and Electronics Engineers Inc.
Pagina's	17.2.1-17.2.4
ISBN van elektronische versie	9781728140315
DOI's	https://doi.org/10.1109/IEDM19573.2019.8993582
Status	Published - dec 2019
Evenement	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duur: 7 dec 2019 → 11 dec 2019

Publicatie series

Naam	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN van geprinte versie	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Land	United States
Stad	San Francisco
Periode	7/12/19 → 11/12/19

Toegang tot document

10.1109/IEDM19573.2019.8993582

Link to publication in Scopus

1 Actief

SRP19: Centrum voor modelgebaseerde systeemverbetering - van computer-gerichte engineering tot model-gerichte engineering
Vandersteen, G., Rolain, Y., Wambacq, P., Kuijk, M., Vandersteen, G., Rolain, Y., Wambacq, P. & Kuijk, M.
1/11/12 → 31/10/24
Project: Fundamenteel

Citeer dit

Peralagu, U., De Jaeger, B., Fleetwood, D. M., Wambacq, P., Zhao, M., Parvais, B., Waldron, N., Collaert, N., Alian, A., Putcha, V., Khaled, A., Rodriguez, R., Sibaja-Hernandez, A., Chang, S., Simoen, E., & Zhao, S. E. (2019). CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. In Proceedings of the 2019 IEEE International Electron Devices Meeting (blz. 17.2.1-17.2.4). [8993582] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993582

Peralagu, U. ; De Jaeger, B. ; Fleetwood, D. M. ; Wambacq, P. ; Zhao, M. ; Parvais, B. ; Waldron, N. ; Collaert, N. ; Alian, A. ; Putcha, V. ; Khaled, A. ; Rodriguez, R. ; Sibaja-Hernandez, A. ; Chang, S. ; Simoen, E. ; Zhao, S. E. / CMOS-compatible GaN-based devices on 200mm-Si for RF applications : Integration and Performance. Proceedings of the 2019 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers Inc., 2019. blz. 17.2.1-17.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{939144372ffa42d7821b9863dde221ba,

title = "CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance",

abstract = "We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.",

author = "U. Peralagu and {De Jaeger}, B. and Fleetwood, {D. M.} and P. Wambacq and M. Zhao and B. Parvais and N. Waldron and N. Collaert and A. Alian and V. Putcha and A. Khaled and R. Rodriguez and A. Sibaja-Hernandez and S. Chang and E. Simoen and Zhao, {S. E.}",

year = "2019",

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doi = "10.1109/IEDM19573.2019.8993582",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "17.2.1--17.2.4",

booktitle = "Proceedings of the 2019 IEEE International Electron Devices Meeting",

address = "United States",

note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

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Peralagu, U, De Jaeger, B, Fleetwood, DM, Wambacq, P, Zhao, M, Parvais, B, Waldron, N, Collaert, N, Alian, A, Putcha, V, Khaled, A, Rodriguez, R, Sibaja-Hernandez, A, Chang, S, Simoen, E & Zhao, SE 2019, CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. in Proceedings of the 2019 IEEE International Electron Devices Meeting., 8993582, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., blz. 17.2.1-17.2.4, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993582

CMOS-compatible GaN-based devices on 200mm-Si for RF applications : Integration and Performance. / Peralagu, U.; De Jaeger, B.; Fleetwood, D. M.; Wambacq, P.; Zhao, M.; Parvais, B.; Waldron, N.; Collaert, N.; Alian, A.; Putcha, V.; Khaled, A.; Rodriguez, R.; Sibaja-Hernandez, A.; Chang, S.; Simoen, E.; Zhao, S. E.

Proceedings of the 2019 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers Inc., 2019. blz. 17.2.1-17.2.4 8993582 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Onderzoeksoutput: Conference paper

TY - GEN

T1 - CMOS-compatible GaN-based devices on 200mm-Si for RF applications

T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019

AU - Peralagu, U.

AU - De Jaeger, B.

AU - Fleetwood, D. M.

AU - Wambacq, P.

AU - Zhao, M.

AU - Parvais, B.

AU - Waldron, N.

AU - Collaert, N.

AU - Alian, A.

AU - Putcha, V.

AU - Khaled, A.

AU - Rodriguez, R.

AU - Sibaja-Hernandez, A.

AU - Chang, S.

AU - Simoen, E.

AU - Zhao, S. E.

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N2 - We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

AB - We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

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U2 - 10.1109/IEDM19573.2019.8993582

DO - 10.1109/IEDM19573.2019.8993582

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AN - SCOPUS:85081051184

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 17.2.1-17.2.4

BT - Proceedings of the 2019 IEEE International Electron Devices Meeting

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 7 December 2019 through 11 December 2019

ER -

Peralagu U, De Jaeger B, Fleetwood DM, Wambacq P, Zhao M, Parvais B et al. CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. In Proceedings of the 2019 IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers Inc. 2019. blz. 17.2.1-17.2.4. 8993582. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM19573.2019.8993582

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

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SRP19: Centrum voor modelgebaseerde systeemverbetering - van computer-gerichte engineering tot model-gerichte engineering

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