CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

U. Peralagu, B. De Jaeger, D. M. Fleetwood, P. Wambacq, M. Zhao, B. Parvais, N. Waldron, N. Collaert, A. Alian, V. Putcha, A. Khaled, R. Rodriguez, A. Sibaja-Hernandez, S. Chang, E. Simoen, S. E. Zhao

Onderzoeksoutput: Conference paper

35 Citaten (Scopus)

Samenvatting

We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

Originele taal-2English
TitelProceedings of the 2019 IEEE International Electron Devices Meeting
UitgeverijInstitute of Electrical and Electronics Engineers Inc.
Pagina's17.2.1-17.2.4
ISBN van elektronische versie9781728140315
DOI's
StatusPublished - dec 2019
Evenement65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duur: 7 dec 201911 dec 2019

Publicatie series

NaamTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN van geprinte versie0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
LandUnited States
StadSan Francisco
Periode7/12/1911/12/19

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