Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS

Gobinath Jegannathan; Hans Ingelberts; Maarten Kuijk

doi:10.3390/app10062155

Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS

Gobinath Jegannathan, Hans Ingelberts, Maarten Kuijk

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current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.

Originele taal-2	English
Artikelnummer	2155
Aantal pagina's	8
Tijdschrift	Applied Sciences
Volume	10
Nummer van het tijdschrift	6
DOI's	https://doi.org/10.3390/app10062155
Status	Published - 22 mrt. 2020

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10.3390/app10062155Licentie: CC BY

applsci-10-02155-v2Final published version, 2,63 MBLicentie: CC BY

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SRP19: Centrum voor modelgebaseerde systeemverbetering - van computer-gerichte engineering tot model-gerichte engineering
Vandersteen, G. (Administrative Promotor), Rolain, Y. (Co-Promoter), Wambacq, P. (Co-Promoter), Kuijk, M. (Co-Promoter), Vandersteen, G. (Administrative Promotor), Rolain, Y. (Co-Promoter), Wambacq, P. (Co-Promoter) & Kuijk, M. (Co-Promoter)
1/11/12 → 31/10/24
Project: Fundamenteel

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abstract = "current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.",

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AU - Ingelberts, Hans

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N2 - current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.

AB - current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm3. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.

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Current-Assisted Single Photon Avalanche Diode (CASPAD) Fabricated in 350 nm Conventional CMOS

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