DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

S. Yadav, A. Vais, R. Y. Elkashlan, L. Witters, K. Vondkar, Y. Mols, A. Walke, H. Yu, R. Alcotte, M. Ingels, P. Wambacq, R. Langer, B. Kunert, N. Waldron, B. Parvais, N. Collaert

Onderzoeksoutput: Conference paper

Samenvatting

Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.

Originele taal-2English
TitelEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
UitgeverijInstitute of Electrical and Electronics Engineers Inc.
Pagina's89-92
Aantal pagina's4
ISBN van elektronische versie9782874870606
StatusPublished - 10 jan 2021
Evenement15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands
Duur: 11 jan 202112 jan 2021

Publicatie series

NaamEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

Conference

Conference15th European Microwave Integrated Circuits Conference, EuMIC 2020
LandNetherlands
StadUtrecht
Periode11/01/2112/01/21

Vingerafdruk

Duik in de onderzoeksthema's van 'DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates'. Samen vormen ze een unieke vingerafdruk.

Citeer dit