Projecten per jaar
Samenvatting
Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.
Originele taal-2 | English |
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Titel | EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference |
Uitgeverij | Institute of Electrical and Electronics Engineers Inc. |
Pagina's | 89-92 |
Aantal pagina's | 4 |
ISBN van elektronische versie | 9782874870606 |
Status | Published - 10 jan 2021 |
Evenement | 15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands Duur: 11 jan 2021 → 12 jan 2021 |
Publicatie series
Naam | EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference |
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Conference
Conference | 15th European Microwave Integrated Circuits Conference, EuMIC 2020 |
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Land | Netherlands |
Stad | Utrecht |
Periode | 11/01/21 → 12/01/21 |
Vingerafdruk
Duik in de onderzoeksthema's van 'DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates'. Samen vormen ze een unieke vingerafdruk.Projecten
- 1 Actief
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SRP19: Centrum voor modelgebaseerde systeemverbetering - van computer-gerichte engineering tot model-gerichte engineering
Vandersteen, G., Rolain, Y., Wambacq, P., Kuijk, M., Vandersteen, G., Rolain, Y., Wambacq, P. & Kuijk, M.
1/11/12 → 31/10/24
Project: Fundamenteel