DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

S. Yadav; A. Vais; R. Y. Elkashlan; L. Witters; K. Vondkar; Y. Mols; A. Walke; H. Yu; R. Alcotte; M. Ingels; P. Wambacq; R. Langer; B. Kunert; N. Waldron; B. Parvais; N. Collaert

DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

S. Yadav, A. Vais, R. Y. Elkashlan, L. Witters, K. Vondkar, Y. Mols, A. Walke, H. Yu, R. Alcotte, M. Ingels, P. Wambacq, R. Langer, B. Kunert, N. Waldron, B. Parvais, N. Collaert

Onderzoeksoutput: Conference paper

3 Citaten (Scopus)

Samenvatting

Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.

Originele taal-2	English
Titel	EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
Uitgeverij	Institute of Electrical and Electronics Engineers Inc.
Pagina's	89-92
Aantal pagina's	4
ISBN van elektronische versie	9782874870606
Status	Published - 10 jan 2021
Evenement	15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands Duur: 11 jan 2021 → 12 jan 2021

Publicatie series

Naam	EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

Conference

Conference	15th European Microwave Integrated Circuits Conference, EuMIC 2020
Land	Netherlands
Stad	Utrecht
Periode	11/01/21 → 12/01/21

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Link to publication in Scopus

1 Actief

SRP19: Centrum voor modelgebaseerde systeemverbetering - van computer-gerichte engineering tot model-gerichte engineering
Vandersteen, G., Rolain, Y., Wambacq, P., Kuijk, M., Vandersteen, G., Rolain, Y., Wambacq, P. & Kuijk, M.
1/11/12 → 31/10/24
Project: Fundamenteel

Citeer dit

Yadav, S., Vais, A., Elkashlan, R. Y., Witters, L., Vondkar, K., Mols, Y., Walke, A., Yu, H., Alcotte, R., Ingels, M., Wambacq, P., Langer, R., Kunert, B., Waldron, N., Parvais, B., & Collaert, N. (2021). DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference (blz. 89-92). [9337489] (EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc..

Yadav, S. ; Vais, A. ; Elkashlan, R. Y. ; Witters, L. ; Vondkar, K. ; Mols, Y. ; Walke, A. ; Yu, H. ; Alcotte, R. ; Ingels, M. ; Wambacq, P. ; Langer, R. ; Kunert, B. ; Waldron, N. ; Parvais, B. ; Collaert, N. / DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2021. blz. 89-92 (EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference).

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title = "DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates",

abstract = "Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.",

keywords = "5G, heterogenous integration, III-V HBTs on Si",

author = "S. Yadav and A. Vais and Elkashlan, {R. Y.} and L. Witters and K. Vondkar and Y. Mols and A. Walke and H. Yu and R. Alcotte and M. Ingels and P. Wambacq and R. Langer and B. Kunert and N. Waldron and B. Parvais and N. Collaert",

year = "2021",

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language = "English",

series = "EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "15th European Microwave Integrated Circuits Conference, EuMIC 2020 ; Conference date: 11-01-2021 Through 12-01-2021",

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Yadav, S, Vais, A, Elkashlan, RY, Witters, L, Vondkar, K, Mols, Y, Walke, A, Yu, H, Alcotte, R, Ingels, M, Wambacq, P, Langer, R, Kunert, B, Waldron, N, Parvais, B & Collaert, N 2021, DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. in EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference., 9337489, EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., blz. 89-92, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21.

DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. / Yadav, S.; Vais, A.; Elkashlan, R. Y.; Witters, L.; Vondkar, K.; Mols, Y.; Walke, A.; Yu, H.; Alcotte, R.; Ingels, M.; Wambacq, P.; Langer, R.; Kunert, B.; Waldron, N.; Parvais, B.; Collaert, N.

EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2021. blz. 89-92 9337489 (EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference).

Onderzoeksoutput: Conference paper

TY - GEN

T1 - DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

AU - Yadav, S.

AU - Vais, A.

AU - Elkashlan, R. Y.

AU - Witters, L.

AU - Vondkar, K.

AU - Mols, Y.

AU - Walke, A.

AU - Yu, H.

AU - Alcotte, R.

AU - Ingels, M.

AU - Wambacq, P.

AU - Langer, R.

AU - Kunert, B.

AU - Waldron, N.

AU - Parvais, B.

AU - Collaert, N.

PY - 2021/1/10

Y1 - 2021/1/10

N2 - Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.

AB - Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.

KW - 5G

KW - heterogenous integration

KW - III-V HBTs on Si

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T3 - EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

SP - 89

EP - 92

BT - EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th European Microwave Integrated Circuits Conference, EuMIC 2020

Y2 - 11 January 2021 through 12 January 2021

ER -

Yadav S, Vais A, Elkashlan RY, Witters L, Vondkar K, Mols Y et al. DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2021. blz. 89-92. 9337489. (EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference).

DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

Samenvatting

Publicatie series

Conference

Toegang tot document

Vingerafdruk

Projecten

SRP19: Centrum voor modelgebaseerde systeemverbetering - van computer-gerichte engineering tot model-gerichte engineering

Citeer dit