@inproceedings{0619b903f76e4b37a594dc979fc7f71e,
title = "DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates",
abstract = "Performance and complexity of next-generation communication systems can be enhanced by the realization of III-V materials on large-area Si substrates and their heterogenous integration with Si-CMOS. In this paper, a GaAs/InGaP HBT technology which is integrated on 300 mm Si substrates using nano-ridge engineering is described. DC and RF characterization of the devices is presented, and device characteristics are explained using physical modeling. The impact of nano-ridge sidewall on device DC performance is studied in detail. Further, a RF small-signal model applicable to these devices is proposed and guidelines for further improvements in RF performance are discussed.",
keywords = "5G, heterogenous integration, III-V HBTs on Si",
author = "S. Yadav and A. Vais and Elkashlan, {R. Y.} and L. Witters and K. Vondkar and Y. Mols and A. Walke and H. Yu and R. Alcotte and M. Ingels and P. Wambacq and R. Langer and B. Kunert and N. Waldron and B. Parvais and N. Collaert",
year = "2021",
month = "1",
day = "10",
language = "English",
series = "EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "89--92",
booktitle = "EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference",
address = "United States",
}