Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications

Dongyang Yan, Mark Ingels, Giovanni Mangraviti, Yao Liu, Bertrand Parvais, Niamh Waldron, Nadine Collaert, Piet Wambacq

Onderzoeksoutput: Conference paperResearch

1 Citaat (Scopus)

Samenvatting

This paper describes the design of a 28 GHz power amplifier (PA) in a commercial GaAs mHEMT technology using concepts that are typical for mm-wave CMOS design. Simulations show a 1dB output compression point of around 23 dBm with a 30% power-added efficiency (PAE) at 28 GHz, while providing a gain of 12 dB. Comparison with the performance of a similar 28 GHz fully-depleted Silicon-On-Insulator (FDSOI) PA shows an increase of the compression point with 10 dB while efficiency is comparable. The high compression point of this GaAsPA offers a margin for system optimization such as a reduction of the number of antennas for beamforming.

Originele taal-2English
Titel17th IEEE International New Circuits and Systems Conference, NEWCAS 2019
UitgeverijInstitute of Electrical and Electronics Engineers Inc.
ISBN van elektronische versie9781728110318
DOI's
StatusPublished - 1 jun 2019
Evenement17th IEEE International New Circuits and Systems Conference, NEWCAS 2019 - Munich, Germany
Duur: 23 jun 201926 jun 2019

Publicatie series

Naam17th IEEE International New Circuits and Systems Conference, NEWCAS 2019

Conference

Conference17th IEEE International New Circuits and Systems Conference, NEWCAS 2019
Land/RegioGermany
StadMunich
Periode23/06/1926/06/19

Vingerafdruk

Duik in de onderzoeksthema's van 'Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications'. Samen vormen ze een unieke vingerafdruk.

Citeer dit