First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

A. Vais; R. Alcotte; M. Ingels; P. Wambacq; B. Parvais; R. Langer; B. Kunert; N. Waldron; N. Collaert; L. Witters; Y. Mols; A. S. Hernandez; A. Walke; H. Yu; M. Baryshnikova; G. Mannaert; V. Deshpande

doi:10.1109/IEDM19573.2019.8993539

First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

A. Vais, R. Alcotte, M. Ingels, P. Wambacq, B. Parvais, R. Langer, B. Kunert, N. Waldron, N. Collaert, L. Witters, Y. Mols, A. S. Hernandez, A. Walke, H. Yu, M. Baryshnikova, G. Mannaert, V. Deshpande

Onderzoeksoutput: Conference paper

5 Citaten (Scopus)

Samenvatting

In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BV_CBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.

Originele taal-2	English
Titel	2019 IEEE International Electron Devices Meeting, IEDM 2019
Uitgeverij	Institute of Electrical and Electronics Engineers Inc.
Pagina's	178-181
Aantal pagina's	4
ISBN van elektronische versie	9781728140315
DOI's	https://doi.org/10.1109/IEDM19573.2019.8993539
Status	Published - dec 2019
Evenement	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duur: 7 dec 2019 → 11 dec 2019

Publicatie series

Naam	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN van geprinte versie	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Land	United States
Stad	San Francisco
Periode	7/12/19 → 11/12/19

Toegang tot document

10.1109/IEDM19573.2019.8993539

Link to publication in Scopus

1 Actief

SRP19: Centrum voor modelgebaseerde systeemverbetering - van computer-gerichte engineering tot model-gerichte engineering
Vandersteen, G., Rolain, Y., Wambacq, P., Kuijk, M., Vandersteen, G., Rolain, Y., Wambacq, P. & Kuijk, M.
1/11/12 → 31/10/24
Project: Fundamenteel

Citeer dit

Vais, A., Alcotte, R., Ingels, M., Wambacq, P., Parvais, B., Langer, R., Kunert, B., Waldron, N., Collaert, N., Witters, L., Mols, Y., Hernandez, A. S., Walke, A., Yu, H., Baryshnikova, M., Mannaert, G., & Deshpande, V. (2019). First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 (blz. 178-181). [8993539] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993539

Vais, A. ; Alcotte, R. ; Ingels, M. ; Wambacq, P. ; Parvais, B. ; Langer, R. ; Kunert, B. ; Waldron, N. ; Collaert, N. ; Witters, L. ; Mols, Y. ; Hernandez, A. S. ; Walke, A. ; Yu, H. ; Baryshnikova, M. ; Mannaert, G. ; Deshpande, V. / First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. blz. 178-181 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{21da516a8dcc4c28b49c78f235fc8085,

title = "First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering",

abstract = "In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.",

author = "A. Vais and R. Alcotte and M. Ingels and P. Wambacq and B. Parvais and R. Langer and B. Kunert and N. Waldron and N. Collaert and L. Witters and Y. Mols and Hernandez, {A. S.} and A. Walke and H. Yu and M. Baryshnikova and G. Mannaert and V. Deshpande",

year = "2019",

month = dec,

doi = "10.1109/IEDM19573.2019.8993539",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "178--181",

booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",

address = "United States",

note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

}

Vais, A, Alcotte, R, Ingels, M, Wambacq, P , Parvais, B, Langer, R, Kunert, B, Waldron, N, Collaert, N, Witters, L, Mols, Y, Hernandez, AS, Walke, A, Yu, H, Baryshnikova, M, Mannaert, G & Deshpande, V 2019, First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993539, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., blz. 178-181, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993539

First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. / Vais, A.; Alcotte, R.; Ingels, M.; Wambacq, P.; Parvais, B.; Langer, R.; Kunert, B.; Waldron, N.; Collaert, N.; Witters, L.; Mols, Y.; Hernandez, A. S.; Walke, A.; Yu, H.; Baryshnikova, M.; Mannaert, G.; Deshpande, V.

2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. blz. 178-181 8993539 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Onderzoeksoutput: Conference paper

TY - GEN

T1 - First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

AU - Vais, A.

AU - Alcotte, R.

AU - Ingels, M.

AU - Wambacq, P.

AU - Parvais, B.

AU - Langer, R.

AU - Kunert, B.

AU - Waldron, N.

AU - Collaert, N.

AU - Witters, L.

AU - Mols, Y.

AU - Hernandez, A. S.

AU - Walke, A.

AU - Yu, H.

AU - Baryshnikova, M.

AU - Mannaert, G.

AU - Deshpande, V.

PY - 2019/12

Y1 - 2019/12

N2 - In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.

AB - In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019

Y2 - 7 December 2019 through 11 December 2019

ER -

Vais A, Alcotte R, Ingels M, Wambacq P , Parvais B, Langer R et al. First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. In 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. blz. 178-181. 8993539. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM19573.2019.8993539

First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

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SRP19: Centrum voor modelgebaseerde systeemverbetering - van computer-gerichte engineering tot model-gerichte engineering

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