First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

A. Vais, R. Alcotte, M. Ingels, P. Wambacq, B. Parvais, R. Langer, B. Kunert, N. Waldron, N. Collaert, L. Witters, Y. Mols, A. S. Hernandez, A. Walke, H. Yu, M. Baryshnikova, G. Mannaert, V. Deshpande

Onderzoeksoutput: Conference paper

5 Citaten (Scopus)

Samenvatting

In this paper, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate. A DC current gain of ~112 and breakdown voltage, BVCBO, of 10 V is achieved. The emitter-base and base-collector diodes show an ideality factor of ~1.2 and ~1.4, respectively. This demonstration shows the potential for enabling a hybrid III-V CMOS/ technology for 5G and mm-wave applications, not limited to GaAs but which can also be extended to InGaAs on a 300 mm Si substrate.

Originele taal-2English
Titel2019 IEEE International Electron Devices Meeting, IEDM 2019
UitgeverijInstitute of Electrical and Electronics Engineers Inc.
Pagina's178-181
Aantal pagina's4
ISBN van elektronische versie9781728140315
DOI's
StatusPublished - dec 2019
Evenement65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duur: 7 dec 201911 dec 2019

Publicatie series

NaamTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN van geprinte versie0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
LandUnited States
StadSan Francisco
Periode7/12/1911/12/19

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